SLVSCM2D October   2014  – December 2019 TPS1H100-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements – Current Sense Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Accurate Current Sense
      2. 7.3.2 Programmable Current Limit
      3. 7.3.3 Inductive-Load Switching-Off Clamp
      4. 7.3.4 Full Protections and Diagnostics
        1. 7.3.4.1  Short-to-GND and Overload Detection
        2. 7.3.4.2  Open-Load Detection
        3. 7.3.4.3  Short-to-Battery Detection
        4. 7.3.4.4  Reverse-Polarity Detection
        5. 7.3.4.5  Thermal Protection Behavior
        6. 7.3.4.6  UVLO Protection
        7. 7.3.4.7  Loss of GND Protection
        8. 7.3.4.8  Loss of Power Supply Protection
        9. 7.3.4.9  Reverse Current Protection
        10. 7.3.4.10 Protection for MCU I/Os
      5. 7.3.5 Diagnostic Enable Function
    4. 7.4 Device Functional Modes
      1. 7.4.1 Working Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Distinguishing of Different Fault Modes
        2. 8.2.2.2 AEC Q100-012 Test Grade A Certification
        3. 8.2.2.3 EMC Transient Disturbances Test
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
      1. 10.2.1 Without a GND Network
      2. 10.2.2 With a GND Network
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics

5 V < VS < 40 V; –40°C < TJ < 150°C unless otherwise specified
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OPERATING VOLTAGE
VS,nom Nominal operating voltage 5 40 V
VS,op Extended operating voltage RDS(on) value increases maximum 20%, compared to 5 V, see RDS(on) parameter 3.5 5 V
VS,UVR Undervoltage restart VS rises up, VS > VS,UVR, device turn on 3.5 3.7 4 V
VS,UVF Undervoltage shutdown VS falls down, VS < VS,UVF, device shuts off 3 3.2 3.5 V
VUV,hys Undervoltage shutdown, hysteresis 0.5 V
OPERATING CURRENT
Inom Nominal operating current VIN = 5 V, VDIAG_EN = 0 V, no load 5 mA
VIN = 5 V, VDIAG_EN = 0 V, 10-Ω load 10 mA
Ioff Standby current VS = 13.5 V, VIN = VDIAG_EN = VCS = VCL = VOUTPUT = 0 V, TJ = 25°C 0.5 µA
VS = 13.5 V, VIN = VDIAG_EN = VCS = VCL = VOUTPUT = 0 V, TJ = 125°C 5 µA
Ioff,diag Standby current with diagnostic enabled VIN = 0 V, VDIAG_EN = 5 V 1.2 mA
toff,deg Standby mode deglitch time(1) IN from high to low, if deglitch time > toff,deg, enters into standby mode. 2 ms
Ileak,out Off-state output leakage current VS = 13.5 V, VIN = VOUTPUT = 0, TJ = 25°C 0.5 µA
VS = 13.5 V, VIN = VOUTPUT = 0, TJ = 125°C 3 µA
POWER STAGE
RDS-ON On-state resistance VS > 5 V, TJ = 25°C 80 100 mΩ
VS > 5 V, TJ = 150°C 166 mΩ
VS = 3.5 V, TJ = 25°C 120 mΩ
Ilim,nom Internal current limit 7 13 A
Ilim,tsd Current limit during thermal shutdown Internal current limit, thermal cycling condition 5 A
External current limit, thermal cycling condition; Percentage of current limit set value 50%
VDS Clamp drain-to-source voltage internally clamped 50 70 V
OUTPUT DIODE CHARACTERISTICS
VF Drain-to-source diode voltage VIN = 0, IOUT = −0.2 A 0.7 V
Irev1 Continuous reverse current when reverse polarity(2) t < 60 s, VS = 13.5 V, GND pin 1-kΩ resistor in parallel with diode. TJ = 25°C. See Irev1 test condition (Figure 6). 4 A
Irev2 Continuous reverse current when
VOUT > VS + Vdiode(2) 		t < 60 s, VS = 13.5 V. TJ = 25°C. See Irev2 test condition (Figure 7). 2 A
LOGIC INPUT (IN AND DIAG_EN)
Vlogic,h Input or DIAG_EN high-level voltage 2 V
Vlogic,l Input or DIAG_EN low-level voltage 0.8 V
Vlogic,hys Input or DIAG_EN hysteresis voltage 250 mV
Rpd,in Input pulldown resistor 500 kΩ
Rpd,diag Diag pulldown resistor 150 kΩ
DIAGNOSTICS
Iloss,gnd Loss-of-ground output leakage current 100 µA
Vol,off Open-load detection threshold in off-state VIN = 0 V, When VS – VOUT < Vol,off, duration longer than tol,off. Open load detected. 1.4 1.8 2.6 V
Iol,off Off-state output sink current with open load VIN = 0 V, VS = VOUT = 13.5 V, TJ = 125°C. –50 µA
tol,off Open-load detection-threshold deglitch time in off state VIN = 0 V, When VS – VOUT < Vol,off, duration longer than tol,off. Open load detected. 600 µs
Iol,on Open-load detection threshold in on state VIN = 5 V, when IOUT < Iol,on, duration longer than tol,on. Open load detected.
Version A only		 2 6 10 mA
tol,on Open-load detection-threshold deglitch time in on-state VIN = 5 V, when IOUT < Iol,on, duration longer than tol,on. Open load detected.
Version A only		 700 µs
VST Status low output voltage IST = 2 mA
Version A only		 0.4 V
TSD Thermal shutdown threshold 175 °C
TSD,rst Thermal shutdown status reset 155
Tsw Thermal swing shutdown threshold 60
Thys Hysteresis for resetting the thermal shutdown and swing 10
CURRENT SENSE (VERSION B) AND CURRENT LIMIT
K Current sense current ratio 500
KCL Current limit current ratio 2000
dK/K Current-sense accuracy Iload ≥ 5 mA –80 80 %
Iload ≥ 25 mA –10 10
Iload ≥ 50 mA –7 7
Iload ≥ 0.1 A –5 5
Iload ≥ 1 A –3 3
dKCL/KCL External current-limit accuracy(3)(4) Ilimit ≥ 0.5 A –20 20 %
Ilimit ≥ 1.6 A –14 14
VCS,lin Linear current sense voltage range(1) VS ≥ 5 V 0 4 V
IOUT,lin Linear output current range(1) VS ≥ 5 V, VCS,lin ≤ 4 V 0 4 A
VCS,H Current-sense fault high voltage VS ≥ 7 V 4.3 4.75 4.9 V
VS ≥ 5 V Min(VS – 0.8, 4.3) 4.9
ICS,H Current sense fault condition current VCS = 4.3 V, VS > 7 V 10 mA
VCL,th Current limit internal threshold voltage(1) 1.233 V
ICS,leak Current sense leakage current in disabled mode VIN = 5 V, Rload = 10 Ω, VDIAG_EN = 0 V, TJ = 125°C 1 µA
VIN = 0 V, VDIAG_EN = 0 V, TJ = 125°C 1 µA
(1) Value is specified by design, not subject to production test.
(2) Value is based on the minimum value of the 10 pcs/3 lots samples.
(3) External current-limit accuracy is only applicable to overload conditions greater than 1.5× the current-limit setting.
(4) External current-limit setting is recommended to be higher than 500 mA.