SLVSDR9F October   2016  – June 2026 DRV8702-Q1 , DRV8703-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
    1.     Pin Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 SPI Timing Requirements
    7. 5.7 Switching Characteristics
    8.     15
    9. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Bridge Control
        1. 6.3.1.1 Logic Tables
      2. 6.3.2  MODE Pin
      3. 6.3.3  nFAULT Pin
      4. 6.3.4  Current Regulation
      5. 6.3.5  Amplifier Output (SO)
        1. 6.3.5.1 SO Sample and Hold Operation
      6. 6.3.6  PWM Motor Gate Drivers
        1. 6.3.6.1 Miller Charge (QGD)
      7. 6.3.7  IDRIVE Pin (DRV8702-Q1 Only)
      8. 6.3.8  Dead Time
      9. 6.3.9  Propagation Delay
      10. 6.3.10 Overcurrent VDS Monitor
      11. 6.3.11 VDS Pin (DRV8702-Q1 Only)
      12. 6.3.12 Charge Pump
      13. 6.3.13 Gate Drive Clamp
      14. 6.3.14 Protection Circuits
        1. 6.3.14.1 VM Undervoltage Lockout (UVLO2)
        2. 6.3.14.2 Logic Undervoltage (UVLO1)
        3. 6.3.14.3 VCP Undervoltage Lockout (CPUV)
        4. 6.3.14.4 Overcurrent Protection (OCP)
        5. 6.3.14.5 Gate Driver Fault (GDF)
        6. 6.3.14.6 Thermal Shutdown (TSD)
        7. 6.3.14.7 Watchdog Fault (WDFLT, DRV8703-Q1 Only)
        8. 6.3.14.8 Reverse Supply Protection
      15. 6.3.15 Hardware Interface
        1. 6.3.15.1 IDRIVE (6-level input)
        2. 6.3.15.2 VDS (6-Level Input)
    4. 6.4 Device Functional Modes
    5. 6.5 Programming
      1. 6.5.1 SPI Communication
        1. 6.5.1.1 Serial Peripheral Interface (SPI)
        2. 6.5.1.2 SPI Format
  8. 7 Register Maps
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External FET Selection
        2. 8.2.2.2 IDRIVE Configuration
        3. 8.2.2.3 VDS Configuration
        4. 8.2.2.4 Current Chopping Configuration
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

6.3.12 Charge Pump

A charge pump is integrated to supply the gate drive voltage of a high-side NMOS (VGSH). The charge pump requires a capacitor between the VM and VCP pins. Additionally, a low-ESR ceramic capacitor is required between the CPH and CPL pins. When the VM voltage is below 13.5V, this charge pump functions as a doubler and generates a VVCP equal to 2 × VVM – 1.5V if unloaded. When the VM voltage is more than 13.5V, the charge pump regulates VVCP such that VVCP is equal to VVM + 10.5V.

DRV8702-Q1 DRV8703-Q1 Charge Pump Block DiagramFigure 6-15 Charge Pump Block Diagram