SLVSEE0E February   2018  – May 2026 TPS1H200A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Current limit
      2. 6.3.2 DELAY Pin Configuration
        1. 6.3.2.1 Holding Mode
        2. 6.3.2.2 Latch-Off Mode
        3. 6.3.2.3 Auto-Retry Mode
      3. 6.3.3 Stand-alone Operation
      4. 6.3.4 Fault Truth Table
      5. 6.3.5 Full Diagnostics
        1. 6.3.5.1 Short-to-GND and Overload Detection
        2. 6.3.5.2 Open-Load Detection
          1. 6.3.5.2.1 Output On
          2. 6.3.5.2.2 Output Off
        3. 6.3.5.3 Short-to-Battery Detection
        4. 6.3.5.4 Thermal Fault Detection
          1. 6.3.5.4.1 Thermal Shutdown
          2. 6.3.5.4.2 Thermal Swing
          3. 6.3.5.4.3 Fault Report Holding
      6. 6.3.6 Full Protections
        1. 6.3.6.1 UVLO Protection
        2. 6.3.6.2 Inductive Load Switching Off Clamp
        3. 6.3.6.3 Loss-of-GND Protection
        4. 6.3.6.4 Loss-of-Power-Supply Protection
        5. 6.3.6.5 Reverse-Current Protection
        6. 6.3.6.6 MCU I/O Protection
    4. 6.4 Device Functional Modes
      1. 6.4.1 Working Modes
        1. 6.4.1.1 Normal Mode
        2. 6.4.1.2 Standby Mode
        3. 6.4.1.3 Standby Mode With Diagnostics
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

5.5 Electrical Characteristics

over operating ambient temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OPERATING VOLTAGE
VVS(nom) Nominal operating voltage 4 40 V
VVS(uvr) Undervoltage restart VVS rising 3.5 3.7 4 V
VVS(uvf) Undervoltage shutdown VVS falling 3 3.2 3.4 V
V(uv,hys) Undervoltage shutdown, hysteresis 0.5 V
OPERATING CURRENT
I(op) Nominal operating current VVS = 13.5V, VIN = 5V
VDIAG_EN = X V, IOUT = 0.5A
ICL = 2A		 5 mA
I(off) Standby current VVS = 13.5V
VIN = VDIAG_EN = VCL = VOUT = 0V
TJ = 25°C		 0.5 µA
VVS = 13.5V
VIN = VDIAG_EN = VCL = VOUT = 0V
TJ = 125°C		 3
I(off,diag) Standby current with diagnostics enabled VVS = 13.5V
VIN = 0V, VDIAG_EN = 5V		 3 mA
t(off,deg) Standby-mode deglitch time(1) IN from high to low
if deglitch time ≥ t(off,deg), then
the device enters into standby mode.		 12.5 ms
Ilkg(out) Output leakage current in OFF state VVS = 13.5V
VIN = VDIAG_EN = VOUT = 0V		 3 µA
POWER STAGE
rDS(on) ON state resistance VVS ≥ 3.5V, TJ = 25°C 200 mΩ
VVS ≥ 3.5V, TJ = 150°C 400
ICL(int) Internal current limit CL pin connected to GND 3.5 4.8 6 A
ICL(TSD) Current-limit value percentage
during thermal shutdown		 60%
VDS(clamp) Drain−to−source voltage
internally clamped		 45 65 V
OUTPUT DIODE CHARACTERISTICS
VF Drain−to-source diode voltage IN = 0, IOUT = −0.15A 0.3 0.7 1 V
IR(1) Continuous reverse current from
source to drain during a
short-to-battery condition(1)		 t < 60s, VIN= 0V, TJ = 25°C. 2 A
IR(2) Continuous reverse current from
source to drain during a
reverse-polarity condition(1)		 t < 60s, VIN= 0V, TJ = 25°C
GND pin 1kΩ resistor in
parallel with diode.		 2 A
LOGIC INPUT (IN, DIAG_EN)
VIH Logic high-level voltage 1.8 V
VIL Logic low-level voltage 0.8 V
Rpd,in Logic-pin pulldown resistor IN. VIN = 5V 150 400 kΩ
DIAG_EN. VVS = VDIAG_EN = 5V 350 850
DIAGNOSTICS
Ilkg(loss,GND) Loss of ground output leakage current 100 µA
td(ol,on) Open-load deglitch time in ON state VIN = 5V, VDIAG_EN = 5V
when IOUT < I(ol,on), duration longer than td(ol,on), open load is detected.		 200 300 450 µs
I(ol,on) Open-load detection threshold
in ON state		 VIN = 5V, VDIAG_EN = 5V
when IOUT < I(ol,on)
duration longer than td(ol,on)
open load is detected.		 10 20 mA
V(ol,off) Open-load detection threshold in OFF state VIN = 0V, VDIAG_EN = 5V
when VVS – VOUT < V(ol,off)
duration longer than td(ol,off)
open load is detected.		 1.4 2.6 V
td(ol,off) Open-load deglitch time
in OFF state		 VIN = 0V, VDIAG_EN = 5V
when VVS – VOUT < V(ol,off)
duration longer than td(ol,off)
open load is detected.		 200 300 450 µs
I(ol,off) OFF state output sink current VIN = 0V, VDIAG_EN = 5V
VVS = VOUT = 13.5V		 –75 µA
VFAULT FAULT low output voltage IFAULT = 2mA 0.2 V
tFAULT FAULT signal holding time(1) 8.5 ms
T(SD) Thermal shutdown threshold(1) 175 °C
T(SD,rst) Thermal shutdown status reset(1) 155 °C
T(sw) Thermal swing shutdown threshold(1) 60 °C
T(hys) Hysterisis for resetting the thermal shutdown and swing(1) 10 °C
CURRENT LIMIT AND DELAY CONFIGURATION
K(CL) Current-limit current ratio(1) 2500
VCL(th) Current-limit internal threshold voltage(1) 0.8 V
dK(CL) / K(CL) External current limit accuracy
(IOUT – ICL × K(CL) × 100 /
(ICL × K(CL))		 Ilimit ≥ 0.25A, VVS – VOUT ≥ 2.5V –20% 20%
Ilimit ≥ 0.5A, VVS – VOUT ≥ 2.5V –15% 15%
Ilimit ≥ 1.5A, Ilimit < 5A
VVS – VOUT ≥ 2.5V		 –10% 10%
Idl(chg) Delay pin charging current
in latch-off mode(1)		 4.5 µA
Vdl(th) Pulling up threshold in auto-retry mode 2.7 V
Vdl(ref) Internal reference voltage
in latch-off mode		 1.45 V
tdl1 Internal fixed delay time(1) 300 400 500 µs
tdl2 Adjustable delay time by external capacitor on DELAY pin(1) Connect with 3.3 µF capacitor
as the maximum value.		 1000 ms
tCL(deg) Deglitch time when current limit (1) IN low to high or IN keeps high but thermal shutdown recovery, VDIAG_EN = 5V
the deglitch time from IN rising
edge to FAULT reporting out.		 300 550 µs
IN keeps high, VDIAG_EN = 5V
the deglitch time from CL start-point to FAULT reporting out.		 80 200
thic(on) On-time when in auto-retry mode(1) 35 40 45 ms
thic(off) Off-time when in auto-retry mode(1) 0.8 1 1.2 s
(1) Value specified by design, not subject to production test.