SLVSFF1C December 2021 – November 2025 LM5123-Q1
PRODUCTION DATA
When SS is greater than 1.5V, the device enters deep sleep mode after at least 40μs in OVP status. The device re-enters active mode if VOUT falls down below VOVP. During bypass operation, the loss, which is caused by the body diode of the high-side MOSFET, is minimized. See Section 7.4.1.5 for more information.
Figure 7-17 PWM to Bypass Transition in
CCM Operation
Figure 7-18 PWM to Bypass Transition in
DCM Operation