SLVSG43B December   2023  – July 2025 TPSI3100-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristic Curves
    12. 6.12 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Transmission of the Enable State
      2. 8.3.2 Power Transmission
      3. 8.3.3 Gate Driver
      4. 8.3.4 Chip Enable (CE)
      5. 8.3.5 Comparators
        1. 8.3.5.1 Fault Comparator
        2. 8.3.5.2 Alarm Comparator
        3. 8.3.5.3 Comparator De-glitch
      6. 8.3.6 VDDP, VDDH, and VDDM Undervoltage Lockout (UVLO)
      7. 8.3.7 Keep-Off Circuitry
      8. 8.3.8 Thermal Shutdown
    4. 8.4 Device Operation
    5. 8.5 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 CDIV1, CDIV2 Capacitance
        2. 9.2.2.2 Start-up Time and Recovery Time
        3. 9.2.2.3 RSHUNT, R1, and R2 Selection
        4. 9.2.2.4 Overcurrent Fault Error
        5. 9.2.2.5 Overcurrent Alarm Error
        6. 9.2.2.6 VDDP Capacitance, CVDDP
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.2.1 Design Requirements

Table 9-1 lists the design requirements of the TPSI310x-Q1 gate driver. The application requires driving external FETs. It includes circuitry for a two-level overcurrent protection that sends an alarm when the load current exceeds its threshold, and a fault when the load current exceeds its overcurrent threshold. Upon a fault, the driver is immediately disabled to protect the external FET and load. The TPSI3100-Q1 used in this example includes a 0.31V voltage reference.

Table 9-1 TPSI310x-Q1 Design Requirements
DESIGN PARAMETERS
Total gate capacitance 120nC
FET turn-off time upon fault detection < 0.5µs
Supply voltage (VDDP) 5V ±5%
Overcurrent fault 8A ±10%
Overcurrent alarm 4A ±10%
Shunt resistor tolerance ±1%