SLVSHE3A June   2024  – July 2025 DRV2911-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings Auto
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Output Stage
      2. 6.3.2 Hardware Interface
      3. 6.3.3 AVDD Linear Voltage Regulator
      4. 6.3.4 Step-Down Mixed-Mode Buck Regulator
        1. 6.3.4.1 Buck in Inductor Mode
        2. 6.3.4.2 Buck in Resistor mode
        3. 6.3.4.3 Buck Regulator with External LDO
        4. 6.3.4.4 AVDD Power Sequencing with Buck Regulator
        5. 6.3.4.5 Mixed mode Buck Operation and Control
        6. 6.3.4.6 Buck Undervoltage Lockout
        7. 6.3.4.7 Buck Overcurrent Protection
      5. 6.3.5 Charge Pump
      6. 6.3.6 Slew Rate Control
      7. 6.3.7 Cross Conduction (Dead Time)
      8. 6.3.8 Propagation Delay
      9. 6.3.9 Protections
        1. 6.3.9.1 PVDD Supply Undervoltage Lockout
        2. 6.3.9.2 AVDD Undervoltage Lockout
        3. 6.3.9.3 VCP Charge Pump Undervoltage Lockout
        4. 6.3.9.4 Overcurrent Latched Protection
        5. 6.3.9.5 Thermal Shutdown (OTSD)
          1. 6.3.9.5.1 OTSD FET
          2. 6.3.9.5.2 OTSD (Non-FET)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Functional Modes
        1. 6.4.1.1 Reset Mode
        2. 6.4.1.2 Operating Mode
        3. 6.4.1.3 Fault Reset (RESETZ Pulse)
      2. 6.4.2 OUTOFF functionality
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Design Procedure
      2. 7.2.2 Voltage and Current Sense Circuitry
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Bulk Capacitance
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Thermal Considerations
        1. 7.4.3.1 Power Dissipation
  9. 8 Device and Documentation Support
    1. 8.1 Third-Party Products Disclaimer
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.3.7 Cross Conduction (Dead Time)

The device is fully protected against any cross-conduction of MOSFETs - during the switching of high-side and low-side MOSFETs, DRV2911-Q1 avoids shoot-through events by inserting a dead time (tdead). This is implemented by sensing the gate-source voltage (VGS) of the high-side and low-side MOSFETs and ensuring that the VGS of the high-side MOSFET has reached below turn-off levels before switching on the low-side MOSFET of the same half-bridge (or vice-versa) as shown in Figure 6-15 and Figure 6-16.

DRV2911-Q1 Cross Conduction ProtectionFigure 6-15 Cross Conduction Protection
DRV2911-Q1 Dead TimeFigure 6-16 Dead Time