SLVSHK0 December   2025 UCD91160

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Linearity Parameters
    7. 5.7 POR and BOR
    8. 5.8 Low Frequency Crystal/Clock
    9. 5.9 Flash Memory Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 TI Sequencer Studio Software
      2. 6.3.2 PMBUS Interface
      3. 6.3.3 PMBUS Security
    4. 6.4 Device Functional Modes
      1. 6.4.1 Black Box First Fault Logging
      2. 6.4.2 PMBus Address Selection
      3. 6.4.3 Brownout
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.9 Flash Memory Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Supply
IDDERASESupply current from VDD during erase operationSupply current delta10mA
IDDPGMSupply current from VDD during program operationSupply current delta10mA
Endurance
NWECErase/program cycle endurance10k cycles
NE(MAX)Total erase operations before failure (1)802k erase operations
Retention
tRET_85Flash memory data retention-40°C <= Tj <= 85°C60years
tRET_105Flash memory data retention-40°C <= Tj <= 105°C11.4years
tRET_130Flash memory data retention-40°C <= Tj <= 130°C2.4years

Fault and Event Logging

NF

Total number of fault event records before failure

64

Million event logs

(1) Total number of cumulative erase operations supported by the flash before failure. A sector erase or bank erase operation is considered to be one erase operation.