SLVSHQ2A December   2024  – April 2025 DRV8351-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Comm
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Diagrams
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three BLDC Gate Drivers
        1. 7.3.1.1 Gate Driver Timings
          1. 7.3.1.1.1 Propagation Delay
          2. 7.3.1.1.2 Dead Time and Cross-Conduction Prevention
        2. 7.3.1.2 Mode (Inverting and non inverting INLx)
      2. 7.3.2 Pin Diagrams
      3. 7.3.3 Gate Driver Protective Circuits
        1. 7.3.3.1 VBSTx Undervoltage Lockout (BSTUV)
        2. 7.3.3.2 GVDD Undervoltage Lockout (GVDDUV)
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Bootstrap Capacitor and GVDD Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

8.2 Typical Application

DRV8351-SEP Application Schematic Figure 8-1 Application Schematic
Note: DRV8351-SEP exhibited cross conduction during characterization of single-event effects (SEE) and single-even burnouts (SEB). To detect overcurrent or short-circuit conditions on the external power MOSFETs, TI recommends to have overcurrent protection circuits such as voltage monitoring across drain and source of FETs or Rsense.