SLVSHQ2A December   2024  – April 2025 DRV8351-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Comm
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Diagrams
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three BLDC Gate Drivers
        1. 7.3.1.1 Gate Driver Timings
          1. 7.3.1.1.1 Propagation Delay
          2. 7.3.1.1.2 Dead Time and Cross-Conduction Prevention
        2. 7.3.1.2 Mode (Inverting and non inverting INLx)
      2. 7.3.2 Pin Diagrams
      3. 7.3.3 Gate Driver Protective Circuits
        1. 7.3.3.1 VBSTx Undervoltage Lockout (BSTUV)
        2. 7.3.3.2 GVDD Undervoltage Lockout (GVDDUV)
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Bootstrap Capacitor and GVDD Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
7.3.1.1.2 Dead Time and Cross-Conduction Prevention

In the DRV8351-SEP, high-side and low-side inputs operate independently, with an exception to prevent cross conduction when high and low side are turned ON at the same time. During normal operation, the DRV8351-SEP turns OFF high-side and low-side output to prevent shoot through when both high-side and low-side inputs are at logic HIGH at the same time.

In DRV8351D-SEP, fixed dead-time of 200ns (typical value) is inserted to prevent high and low side gate output turning ON at same time.

DRV8351-SEP Cross Conduction Prevention and Dead Time InsertionFigure 7-2 Cross Conduction Prevention and Dead Time Insertion
Note: DRV8351-SEP exhibited cross conduction during characterization of single-event effects (SEE) and single-even burnouts (SEB). Please refer to Single-Event Effects (SEE) report for more details.