SLVSI54 May   2025 TPS60800-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Charge-Pump Output Resistance
      2. 7.3.2 Efficiency Considerations
    4. 7.4 Device Functional Modes
      1. 7.4.1 Active-Schottky Diode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Capacitor Selection
        2. 8.2.2.2 Input Capacitor (CI)
        3. 8.2.2.3 Flying Capacitor (C(fly))
        4. 8.2.2.4 Output Capacitor (CO)
        5. 8.2.2.5 Power Dissipation
      3. 8.2.3 Application Curve
    3. 8.3 System Examples
      1. 8.3.1 RC-Post Filter
      2. 8.3.2 Rail Splitter
      3. 8.3.3 Combined Doubler, Inverter
      4. 8.3.4 Cascading Devices
      5. 8.3.5 Paralleling Devices
      6. 8.3.6 Step-Down Charge Pump
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

9.5 Electrostatic Discharge Caution

TPS60800-Q1 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.