SLVSIO1B March   2026  – April 2026 UCG28836 , UCG28846

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Detailed Pin Descriptions
      1. 7.3.1  HV - High Voltage Input
      2. 7.3.2  SW - Switch Node
      3. 7.3.3  GND – Ground Return
      4. 7.3.4  FLT - External Overtemperature Fault
      5. 7.3.5  FB ­­– Feedback
      6. 7.3.6  TR - Turns Ratio
      7. 7.3.7  IPS - Peak Current, and Slew Rate
      8. 7.3.8  FCL - Frequency Clamp and Fault Response
      9. 7.3.9  CFX - CCM, Frequency Foldback and X-cap Discharge
      10. 7.3.10 VCC - Input Bias
    4. 7.4 Feature Description
      1. 7.4.1  Self Bias and Auxless Sensing
      2. 7.4.2  Control Law
        1. 7.4.2.1 Valley Switching
        2. 7.4.2.2 Frequency Foldback
        3. 7.4.2.3 Burst Mode
        4. 7.4.2.4 Continuous Conduction Mode (CCM)
      3. 7.4.3  GaN HEMT Switching Capability
      4. 7.4.4  Soft Start
      5. 7.4.5  Frequency Clamp
      6. 7.4.6  Frequency Dithering
      7. 7.4.7  Slew Rate Control
      8. 7.4.8  Transient Peak Power Capability
      9. 7.4.9  X-Cap Discharge
      10. 7.4.10 Fault Protections
        1. 7.4.10.1 Brownout Protection
        2. 7.4.10.2 Short-Circuit Protection
        3. 7.4.10.3 Output Overvoltage Protection
        4. 7.4.10.4 Overpower Protection (OPP, LPS)
        5. 7.4.10.5 Overtemperature Protection
        6. 7.4.10.6 Open FB Protection
        7. 7.4.10.7 Error Codes for Protections
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Bulk Capacitor
        2. 8.2.2.2 Transformer Primary Inductance and Turns Ratio
        3. 8.2.2.3 Output Capacitor
        4. 8.2.2.4 Selection Resistors
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

7.4.3 GaN HEMT Switching Capability

The UCG2883x/4x primary-side integrated GaN HEMT switching capability is explained with the help of Figure 7-8. The figure shows the drain-source voltage (same as SW pin voltage) for the UCG2883x/4x for two distinct switching cycles in a flyback application. The first switching cycle is a normal switching cycle followed by a surge switching cycle in DCM/valley switching condition.

UCG28836 UCG28846 GaN HEMT Switching Capability Figure 7-8 GaN HEMT Switching Capability

Each cycle starts before t0 with the GaN HEMT in on state. At t0, the GaN HEMT turns off and the parasitic elements cause the drain-source voltage to ring at a high frequency. The high frequency ringing has damped out by t1. Between t1 and t2, the HEMT drain-source is at a flat plateau voltage with reducing secondary winding current in a flyback design. At t2, the GaN HEMT turns on at a valley. During normal operation, the device can safely operates up to 750V leakage transient voltage (VSW(tr)) in every switching cycle. For rare surge events, the transient ring voltage is limited to 800V and the plateau is limited to 750V.