SLVSIO1B March   2026  – April 2026 UCG28836 , UCG28846

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Detailed Pin Descriptions
      1. 7.3.1  HV - High Voltage Input
      2. 7.3.2  SW - Switch Node
      3. 7.3.3  GND – Ground Return
      4. 7.3.4  FLT - External Overtemperature Fault
      5. 7.3.5  FB ­­– Feedback
      6. 7.3.6  TR - Turns Ratio
      7. 7.3.7  IPS - Peak Current, and Slew Rate
      8. 7.3.8  FCL - Frequency Clamp and Fault Response
      9. 7.3.9  CFX - CCM, Frequency Foldback and X-cap Discharge
      10. 7.3.10 VCC - Input Bias
    4. 7.4 Feature Description
      1. 7.4.1  Self Bias and Auxless Sensing
      2. 7.4.2  Control Law
        1. 7.4.2.1 Valley Switching
        2. 7.4.2.2 Frequency Foldback
        3. 7.4.2.3 Burst Mode
        4. 7.4.2.4 Continuous Conduction Mode (CCM)
      3. 7.4.3  GaN HEMT Switching Capability
      4. 7.4.4  Soft Start
      5. 7.4.5  Frequency Clamp
      6. 7.4.6  Frequency Dithering
      7. 7.4.7  Slew Rate Control
      8. 7.4.8  Transient Peak Power Capability
      9. 7.4.9  X-Cap Discharge
      10. 7.4.10 Fault Protections
        1. 7.4.10.1 Brownout Protection
        2. 7.4.10.2 Short-Circuit Protection
        3. 7.4.10.3 Output Overvoltage Protection
        4. 7.4.10.4 Overpower Protection (OPP, LPS)
        5. 7.4.10.5 Overtemperature Protection
        6. 7.4.10.6 Open FB Protection
        7. 7.4.10.7 Error Codes for Protections
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Bulk Capacitor
        2. 8.2.2.2 Transformer Primary Inductance and Turns Ratio
        3. 8.2.2.3 Output Capacitor
        4. 8.2.2.4 Selection Resistors
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

7.4.2.4 Continuous Conduction Mode (CCM)

As shown in Figure 7-4, once the boundary of 1st valley QR operation is reached with increasing output power, the control clamps IPK to the maximum selected value IPK,MAX, and begins to reduce the secondary conduction time TOFF in CCM mode. This reduction in TOFF is proportional to increase in FB pin voltage, until 30% of the QR mode off-time to reach maximum 1.7× the QR mode output power delivery capability. Use a primary side magnetizing inductance LM large enough to not hit the frequency clamp during CCM mode and avoid any subharmonic oscillations which can increase output voltage ripple, depending on application requirements. In CCM mode, the clamping frequency for the switching frequency clamp is doubled to maximize the peak power capability. For long duration output power transients, the converter returns to 1st valley QR mode after expiry of the 10ms CCM timer for 4 switching cycles of QR mode operation and resumes CCM operation. This operation repeats every 10ms, until the power becomes lower so that the CCM operation is no longer needed. The device offers flexibility to enable or disable CCM mode operation with a resistor from the CFX pin to GND as per values in Table 7-4.