SLVSN13
September 2026
SN74LVC1G57B-Q1
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
5
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Switching Characteristics
5.7
Typical Characteristics
6
Parameter Measurement Information
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Balanced CMOS Push-Pull Outputs
7.3.2
CMOS Schmitt-Trigger Inputs
7.3.3
Partial Power Down (Ioff)
7.3.4
Clamp Diode Structure
7.3.5
Over-Voltage Tolerant Inputs
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.1.1
Power Considerations
8.2.1.2
Input Considerations
8.2.1.3
Output Considerations
8.2.2
Detailed Design Procedure
8.2.3
Application Curve
8.3
Power Supply Recommendations
8.4
Layout
8.4.1
Layout Guidelines
8.4.2
Layout Example
9
Device and Documentation Support
9.1
Documentation Support
9.1.1
Related Documentation
9.2
Receiving Notification of Documentation Updates
9.3
Support Resources
9.4
Trademarks
9.5
Electrostatic Discharge Caution
9.6
Glossary
10
Revision History
11
Mechanical, Packaging, and Orderable Information
1
Features
AEC-Q100 qualified for automotive applications:
Device temperature grade 1: -40°C to +125°C
Device HBM ESD classification level 2
Device CDM ESD classification level C4B
Operating range from 1.1V to 5.5V
Over-voltage tolerant inputs support up to 5.5V independent of V
CC
Supports
partial-power-down
with back drive protection (I
off
)
High
push-pull
output drive strength:
±
32mA at 5V
±
24mA at 3.3V
±
8mA at 2.5V
±
4mA at 1.8V
Maximum propagation delay of
4.4ns at 5V V
CC
; C
L
= 15pF
Latch-up performance exceeds 100mA
per JESD78
and AEC-Q100-004