SLVT229 December   2025

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 High Side Gate Drive Circuit
      2. 2.2.2 PWM Generation Circuit
    3. 2.3 Highlighted Products
      1. 2.3.1 UCC21330-Q1 Overview
      2. 2.3.2 UCC27211A-Q1 Overview
      3. 2.3.3 TPS1212-Q1 Overview
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Test Setup
    3. 3.3 Test Results
      1. 3.3.1 Efficiency Data
      2. 3.3.2 Efficiency Graphs
      3. 3.3.3 Output Voltage Ripple
      4. 3.3.4 Thermal Images
      5. 3.3.5 Switch Voltage Stress of High Side Switches
      6. 3.3.6 Load Transients
      7. 3.3.7 Reverse Step-up Operation of SCC
  10. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 PCB Layout Recommendations
    2. 4.2 Documentation Support
    3.     Trademarks

PWM Generation Circuit

In this reference design, TLC555-Q1 is used to generate a pair of complementary PWM signal, of which the switching frequency can be self-adjustable. At lighter load the switching frequency is decreased to about 140kHz to reduce gate drive loss and switching loss, and at higher load the switching frequency is increased to resonance (about 300kHz) where switching loss can be even lower.

The output current of the SCC power stage is first sensed by the bidirectional current sense INA241-Q1 (not shown in Figure 2-3). Then the rail-to-rail amplifier TLV6001-Q1 creates an output voltage:

Vamp = 3.3V – I_LV_SNS (1)

Since for PNP transistor Ve – Vb = 0.6V, two equations for the PNP transistor Q1 on the left can be derived to associate the amplifier output with the bias current Iec:

3.3V – 680Ω × Iec = Ve (2)

(Ve – 0.6V) – 1kΩ × Iec = Vamp (3)

Then the following equation can be derived:

Vamp = 2.7V – 1.68kΩ × Iec (4)

Further combining with (1), the final relationship of I_LV_SNS and Iec are:

I_LV_SNS = 0.6V + 1.68kΩ × Iec (5)

(5) demonstrates that the higher the output current, the higher the bias current injecting into the charging and discharging circuit of TLC555-Q1 is, and hence higher output frequency.

Also note that due to the nature of the astable operation of TLC555-Q1, the duty ratio of the PWM output of TLC555-Q1 here is not 50%. Therefore, the current mirror section of this circuit is deliberately set to be twice the desired frequency (280kHz to 640kHz), and a following frequency divider by two using the D-latch can reduce the frequency by half (down to 140kHz to 320kHz) and also reset the duty ratio to 50%.

For further information on the astable operation of TLC555-Q1, read the datasheet for more detailed discussions.

PMP41150 PWM Generation CircuitFigure 2-3 PWM Generation Circuit