SLVT231A November 2025 – December 2025
The reference design is designed for high boost factor and high efficiency. The design operates over a wide input voltage range, starting from 3V using the LMG5126 boost converter with integrated Gallium Nitride (GaN) field-effect transistors (FETs). The reference design includes features such as spread spectrum, current limit, thermal shutdown, overvoltage protection, and undervoltage lockout.