SLVT233 December   2025

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6. 1Test Prerequisites
    1. 1.1 Voltage and Current Requirements
    2. 1.2 Required Equipment
    3. 1.3 Considerations
    4. 1.4 Dimensions
  7. 2Testing and Results
    1. 2.1 Efficiency Graphs
    2. 2.2 Efficiency Data
    3. 2.3 Thermal Images
    4. 2.4 Bode Plots
  8. 3Waveforms
    1. 3.1 Switching
    2. 3.2 Output Voltage Ripple
    3. 3.3 Load Transients
  9. 4Trademarks

Features

  • Over 90% efficiency at mid and full load operation
  • 200V galvanic isolation through half-bridge gate-driver
  • 55mm × 45mm design size, two-layer PCB
  • GaN FETs and synchronous rectification
  • Plastic pin-to-pin population options for rad-tolerant or rad-hard configurations
    • Rad-tolerant (TID 50krad, SEE immune to 43MeV×cm2 /mg: TPS7H5020-SEP and TPS7H6005-SEP)
    • Rad-hard (TID 100krad, SEE immune to 75MeV×cm2 /mg: TPS7H5020-SP and TPS7H6005-SP)