SNAS491C February   2010  – January 2025 LM48580

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics: VDD = 3.6 V #GUID-238D0643-98EF-4676-B2E1-A584A5DF74F7/SNAS491599
    6. 5.6 Typical Performance Characteristics
  7.   Parameter Measurement Information
  8. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Class H Operation
      2. 6.3.2 Properties of Piezoelectric Elements
      3. 6.3.3 Differential Amplifier Explanation
      4. 6.3.4 Thermal Shutdown
      5. 6.3.5 Gain Setting
    4. 6.4 Device Functional Modes
      1. 6.4.1 Shutdown Function
  9. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
        1. 7.2.1.1 Proper Selection of External Components
          1. 7.2.1.1.1 Boost Converter Capacitor Selection
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Boost Converter Output Capacitor Selection
          1. 7.2.2.1.1 Inductor Selection
          2. 7.2.2.1.2 Diode Selection
        2. 7.2.2.2 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  10. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Community Resources
    4. 8.4 Trademarks
  11. 9 Revision History
  12. 10Mechanical, Packaging, and Orderable Information

5.4 Thermal Information

THERMAL METRIC(1)LM48580UNIT
YZR (DSBGA)
12 PINS
RθJAJunction-to-ambient thermal resistance82.1°C/W
RθJC(top)Junction-to-case (top) thermal resistance0.6°C/W
RθJBJunction-to-board thermal resistance20.6°C/W
ψJTJunction-to-top characterization parameter0.4°C/W
ψJBJunction-to-board characterization parameter20.7°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistancen/a°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.