SNAS513F August   2011  – November 2015 LM48560

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Electrical Characteristics VDD = 3.6 V
    5. 6.5 I2C Interface Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 General Amplifier Function
      2. 8.3.2 Class H Operation
      3. 8.3.3 Differential Amplifier Explanation
      4. 8.3.4 Automatic Level Control (ALC)
      5. 8.3.5 Attack Time
      6. 8.3.6 Release Time
      7. 8.3.7 Boost Converter
      8. 8.3.8 Gain Setting
      9. 8.3.9 Shutdown Function
    4. 8.4 Device Functional Modes
      1. 8.4.1 Software or Hardware Mode
      2. 8.4.2 Single-Ended Input Configuration
    5. 8.5 Programming
      1. 8.5.1 Read/Write I2C Compatible Interface
      2. 8.5.2 Write Sequence
      3. 8.5.3 Read Sequence
    6. 8.6 Register Maps
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Proper Selection of External Components
          1. 9.2.2.1.1 ALC Timing (CSET) Capacitor Selection
          2. 9.2.2.1.2 Power Selection of External Components
          3. 9.2.2.1.3 Boost Converter Capacitor Selection
          4. 9.2.2.1.4 Inductor Selection
          5. 9.2.2.1.5 Diode Selection
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

12 Device and Documentation Support

12.1 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.2 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.