SNAS889 March   2026 LMK6B

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Environmental Compliance
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Device Output Configurations
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Features Description
      1. 8.3.1 Bulk Acoustic Wave (BAW)
      2. 8.3.2 Device Block-Level Description
      3. 8.3.3 Function Pins
      4. 8.3.4 Output Terminations
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Clocking TI Clock Buffers with the LMK6Bx
      4. 9.2.4 Application Curves
        1. 9.2.4.1 LVDS Phase Noise Curves
        2. 9.2.4.2 AC-LVPECL Phase Noise Curves
        3. 9.2.4.3 LP-HCSL Phase Noise Curves
    3. 9.3 Replacing Competitor Oscillators with the LMK6Bx
      1. 9.3.1 Replacing a LVPECL oscillator with the LMK6Bx
      2. 9.3.2 Replacing a HCSL OSC With the LMK6Bx
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
        1. 9.5.1.1 Providing Thermal Reliability
        2. 9.5.1.2 Recommended Solder Reflow Profile
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Mechanical Data
    2. 12.2 Tape and Reel Information

8.3.1 Bulk Acoustic Wave (BAW)

TI’s BAW resonator technology uses piezoelectric transduction to generate high-Q resonance at 2.5GHz. The resonator is defined by the quadrilateral area overlaid by top and bottom electrodes. Alternating high- and low-acoustic impedance layers form acoustic mirrors beneath the resonant body to prevent acoustic energy leakage into the substrate. Furthermore, these acoustic mirrors are also placed on top of the resonator stack to protect the device from contamination and minimize energy leakage into the package materials. This unique dual-Bragg acoustic resonator (DBAR) allows efficient excitation without the need of costly vacuum cavities around the resonator. As a result, TI’s BAW resonator is immune to frequency drift caused by adsorption of surface contaminants and can be directly placed in the non-hermetic plastic package with a small standard oscillator footprint of the oscillator IC. Refer to the BAW webpage for more details on TI's BAW technology.