SNOSAV4C April   2008  – August 2026 LM7332

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Thermal Information
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
    7. 5.7 Old vs. New Die Comparison
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Device Functional Modes
      1. 6.3.1 Driving Capacitive Loads
    4. 6.4 Electrical Overstress
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Output Short Circuit Current and Dissipation Issues
  9. 8 Device and Documentation Support
    1. 8.1 Support Resources
    2. 8.2 Trademarks
    3. 8.3 Electrostatic Discharge Caution
    4. 8.4 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.7 Old vs. New Die Comparison

As of the publication of revision C of this data sheet, Texas Instruments has moved manufacturing of the die for LM7332 to a modern fabrication site. The two different die are referred to in this document as “old” (previous fabrication site) and “new” die. The die origin can be separated from the “Chip Source Origin” (CSO) parameter in the shipping information. The old die CSO is “GF6”, for the new die the CSO is “RFB”. The old die information is in the shipping information. The old die CSO is “GF6”, for the new die the CSO is “RFB”. The old die information is maintained in this data sheet for comparison purposes, but all new manufacturing has moved to the new die.