SNOSAV4C April   2008  – August 2026 LM7332

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Thermal Information
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
    7. 5.7 Old vs. New Die Comparison
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Device Functional Modes
      1. 6.3.1 Driving Capacitive Loads
    4. 6.4 Electrical Overstress
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Output Short Circuit Current and Dissipation Issues
  9. 8 Device and Documentation Support
    1. 8.1 Support Resources
    2. 8.2 Trademarks
    3. 8.3 Electrostatic Discharge Caution
    4. 8.4 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

For VS = (V+) – (V–) = 2.7V to 32V (±1.35V to ±16V) at TA = 25°C, RL = 10kΩ connected to VS / 2, VCM = VS / 2, and VOUT = VS / 2, unless otherwise noted.(1)
PARAMETER TEST CONDITIONS MIN (2) TYP (3) MAX (2) UNIT
VOS Input offset voltage VCM = V− −4 ±0.35 4 mV
VOS Input offset voltage temperature drift(4) VCM = V− ±2.5 µV/°C
IB Input bias current(5) VCM = V− TA = –40°C to +125°C −2 ±0.4 2 µA
IOS Input offset current VCM = V− TA = –40°C to +125°C 7 250 nA
CMRR Common-mode rejection ratio VS = 32V, V– < VCM < (V+) – 2V
(Main Input Pair)		 TA = –40°C to 125°C 109 125 dB
VS = 5V, V– < VCM < (V+) – 2V
(Main Input Pair)(1)		 TA = –40°C to 125°C 93 111
VS = 2.7V, V– < VCM < (V+) – 2V
(Main Input Pair)		 TA = –40°C to 125°C 114
VS = 2.7 – 32V, (V+) – 1V < VCM < V+
(Aux Input Pair)		 TA = –40°C to 125°C 77
(V+) – 2V < VCM < (V+) – 1V TA = –40°C to 125°C See Figure 5-22
PSRR Power supply rejection ration VCM = V–, VS = 5V to 32V TA = –40°C to 125°C 78 100 dB
CMVR Input common-mode voltage range (V−) − 0.1 (V+) + 0.1 V
AOL Open-loop voltage gain VS = 32V, VCM = VS / 2,
(V–) + 1V < VO < (V+) –  1V		 72 87 dB
TA = –40°C to 125°C 70 87
VS = 5V, VCM = VS / 2,
(V–) + 1V < VO < (V+) –  1V(1)		 72 80
TA = –40°C to 125°C 70 80
VS = 2.7V, VCM = VS / 2,
(V–) + 1V < VO < (V+) –  1V(1)		 70 80
TA = –40°C to 125°C 65 80
VO Output swing
high		 RL = 10kΩ to 0V
VID = 100mV		 50 250 mV from either rail
TA = –40°C to 125°C 300
RL = 2kΩ to 0V
VID = 100mV		 50 350
TA = –40°C to 125°C 400
Output swing
low		 RL = 10kΩ to 0V
VID = −100mV		 50 250
TA = –40°C to 125°C 300
RL = 2kΩ to 0V
VID = −100mV		 50 350
TA = –40°C to 125°C 400
ISC Short-circuit current VS = 32V ±62 ±125
VS = 5V ±50 ±85
VS = 2.7V ±30 ±60
IS Total supply current No Load, VCM = V− 2.7 3.86 mA
TA = –40°C to 125°C 4.46
SR Slew rate AV = +1, VI = 10V step,
CL = 20pF		 35 V/µs
ROUT Close-loop output resistance AV = +1, f = 100kHz 1 Ω
fu Unity-gain frequency RL = 10MΩ, CL = 20pF 11 MHz
GBWP Gain bandwidth product 24 MHz
en Input-referred voltage noise f = 2kHz 14.7 nV/√ HZ
in Input-referred current noise f = 2kHz 1.3 pA/√ HZ
THD+N Total harmonic distortion + noise VO = 3VRMS, G = 1, f = 1kHz, RL = 10kΩ −113 dB
CT Rej. Crosstalk rejection f = 3MHz, driver RL = 10kΩ 120 dB
(1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No promised specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
(2) All limits are verified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values can vary over time and also depend on the application and configuration. The typical values are not tested and are not promised on shipped production material.
(4) Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing in the device.