SNOSDM7 August   2025 OPA4H838-SEP

ADVANCE INFORMATION  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics: VS = ±1.25V to ±2.75V (VS = 2.5 to 5.5V)
  7. 6Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Operating Voltage
      2. 6.3.2 Input Voltage and Zero-Crossover Functionality
      3. 6.3.3 Input Differential Voltage
      4. 6.3.4 Internal Offset Correction
      5. 6.3.5 EMI Susceptibility and Input Filtering
    4. 6.4 Device Functional Modes
  8. 7Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Bidirectional Current-Sensing
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Single Operational Amplifier Bridge Amplifier
      3. 7.2.3 Precision, Low-Noise, DAC Buffer
      4. 7.2.4 Load Cell Measurement
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 TINA-TI™ Simulation Software (Free Download)
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics: VS = ±1.25V to ±2.75V (VS = 2.5 to 5.5V)

at TA = 25°C, VCM = VOUT = VS / 2, and RLOAD = 10kΩ connected to VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage VS = 5.5V ±2.25 ±8 µV
TA = –55°C to +125°C, VS = 5.5V(1) ±10.5
dVOS/dT Input offset voltage drift TA = –55°C to +125°C, VS = 5.5V(1) ±0.005 ±0.05 µV/°C
PSRR Power-supply rejection ratio TA = –55°C to +125°C(1) ±1.25 ±3.5 µV/V
INPUT BIAS CURRENT
IB Input bias current RIN = 100kΩ ±30 ±500 pA
TA = -55°C to +125°C(1) ±800
IOS Input offset current RIN = 100kΩ ±1000
TA = –55°C to +125°C(1) ±1100
NOISE
EN Input voltage noise f = 0.1Hz to 10Hz 0.14 µVPP
eN Input voltage noise density f = 10Hz 7 nV/√Hz
f = 100Hz 7
f = 1kHz 7
f = 10kHz 7
IN Input current noise density f = 1kHz 100 fA/√Hz
INPUT VOLTAGE
VCM Common-mode voltage range (V–) – 0.1 (V+) + 0.1 V
CMRR Common-mode rejection ratio  (V–) – 0.1V < VCM < (V+) + 0.1V VS = ±1.25V  102 110 dB
VS = ±2.75V 124 140
(V–) < VCM < (V+) + 0.1V,
TA = –55°C to +125°C(1)		 VS = ±1.25V 102 107
(V–) – 0.05V < VCM < (V+) + 0.1V, TA = –55°C to +125°C(1) VS = ±2.75V 124 140
INPUT IMPEDANCE
zid Differential input impedance 100 || 2 MΩ || pF
zic Common-mode input impedance 60 || 4.5 TΩ || pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain (V–) + 0.15V < VO < (V+) – 0.15 V, RLOAD = 10kΩ 126 148 dB
(V–) + 0.15V < VO < (V+) – 0.15V, RLOAD = 10kΩ, VS = 5.5V
TA = –55°C to +125°C(1)		 120 126
(V–) + 0.25V < VO < (V+) – 0.25V, RLOAD = 2kΩ 126 148
(V–) + 0.30V < VO < (V+) – 0.30V, RLOAD = 2kΩ, VS = 5.5V
TA = –55°C to +125°C(1)		 120 126
FREQUENCY RESPONSE
GBW Unity-gain bandwidth 10 MHz
SR Slew rate G = 1, 4V step 5 V/µs
THD+N Total harmonic distortion + noise G = 1, f = 1kHz, VO = 1VRMS 0.0005%
tS Settling time To 0.1% VS = ±2.5V, G = 1,
1V step		 0.75 µs
To 0.01% VS = ±2.5V, G = 1,
1V step		 2 µs
tOR Overload recovery time VIN × G = VS 10 µs
OUTPUT
VO Voltage output swing from rail Positive rail No load 1 15 mV
RLOAD = 10kΩ 5 20
RLOAD = 2kΩ 20 50
Negative rail No load 5 15
RLOAD = 10kΩ 10 20
RLOAD = 2kΩ 40 60
RLOAD = 10kΩ, both rails,TA = –55°C to +125°C(1) 10 25
ISC Short-circuit current VS = 5.5V  ±60 mA
VS = 2.5V  ±30 mA
ZO Open-loop output impedance f = 1MHz, IO = 0A 100 Ω
POWER SUPPLY
IQ  Quiescent current per amplifier VS = ±1.25V (VS = 2.5V) IO = 0A 1.7 2.4 mA
IO = 0A, TA = –55°C to +125°C(1) 1.7 2.4
VS = ±2.75V (VS = 5.5V) IO = 0A 1.9 2.6
IO = 0A, TA = –55°C to +125°C(1) 1.9 2.6
(1) Specification established from device population bench system measurements across multiple lots.