SNOSDM7A August   2025  – April 2026 OPA4H838-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics: VS = ±1.25 V to ±2.75 V (VS = 2.5 to 5.5 V)
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Operating Voltage
      2. 6.3.2 Input Voltage and Zero-Crossover Functionality
      3. 6.3.3 Input Differential Voltage
      4. 6.3.4 Internal Offset Correction
      5. 6.3.5 EMI Susceptibility and Input Filtering
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Bidirectional Current-Sensing
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Single Operational Amplifier Bridge Amplifier
      3. 7.2.3 Programmable High-Side Current Source
      4. 7.2.4 Load Cell Measurement
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
      2. 8.1.2 Development Support
        1. 8.1.2.1 TINA-TI™ Simulation Software (Free Download)
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

1 Features

  • Radiation tolerant
    • Single event latch-up (SEL) immune to 43MeV-cm2/mg at 125°C
    • ELDRS free to 30krad(Si)
    • Total Ionizing Dose (TID) RLAT for every wafer lot up to 30krad(Si)
  • Supports defense and aerospace applications
    • Controlled baseline
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
    • Outgassing test performed per ASTM E595
  • Ultra-low offset voltage: ±0.25µV
  • Zero drift: ±0.01µV/°C
  • Zero crossover: 140dB CMRR true RRIO
  • Low noise: 7.0nV√Hz at 1kHz
  • No 1/f noise: 140nVPP (0.1Hz to 10Hz)
  • Fast settling: 2µs (1V to 0.01%)
  • Gain bandwidth: 10MHz
  • Supply voltage: ±1.25V to ±2.75V, 2.5V to 5.5V
  • True rail-to-rail input and output
  • EMI/RFI filtered inputs