SNOSDM7A August   2025  – April 2026 OPA4H838-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics: VS = ±1.25 V to ±2.75 V (VS = 2.5 to 5.5 V)
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Operating Voltage
      2. 6.3.2 Input Voltage and Zero-Crossover Functionality
      3. 6.3.3 Input Differential Voltage
      4. 6.3.4 Internal Offset Correction
      5. 6.3.5 EMI Susceptibility and Input Filtering
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Bidirectional Current-Sensing
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Single Operational Amplifier Bridge Amplifier
      3. 7.2.3 Programmable High-Side Current Source
      4. 7.2.4 Load Cell Measurement
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
      2. 8.1.2 Development Support
        1. 8.1.2.1 TINA-TI™ Simulation Software (Free Download)
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics: VS = ±1.25 V to ±2.75 V (VS = 2.5 to 5.5 V)

at TA = 25°C, VCM = VOUT = VS / 2, and RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage VS = 5.5 V ±2.25 ±10.5 µV
VOS Input offset voltage TA = –55°C to +125°C, VS = 5.5 V(1) ±11 µV
dVOS/dT Input offset voltage drift TA = –55°C to +125°C, VS = 5.5 V(1) ±0.01 ±0.05 µV/°C
PSRR Power-supply rejection ratio TA = –55°C to +125°C(1) ±1.25 ±3.5 µV/V
INPUT BIAS CURRENT
IB Input bias current RIN = 100 kΩ ±30 ±1000 pA
TA = -55°C to +125°C(1) ±1000
IOS Input offset current RIN = 100 kΩ ±1000
TA = –55°C to +125°C(1) ±1100
NOISE
EN Input voltage noise f = 0.1 Hz to 10 Hz 0.14 µVPP
eN Input voltage noise density f = 10 Hz 7 nV/√Hz
f = 100 Hz 7
f = 1 kHz 7
f = 10 kHz 7
IN Input current noise density f = 1 kHz 100 fA/√Hz
INPUT VOLTAGE
VCM Common-mode voltage range (V–) – 0.1 (V+) + 0.1 V
CMRR Common-mode rejection ratio  (V–) – 0.1 V < VCM < (V+) + 0.1 V VS = ±1.25 V  102 110 dB
VS = ±2.75 V 124 140
(V–) < VCM < (V+) + 0.1 V,
TA = –55°C to +125°C(1)		 VS = ±1.25 V 102 107
(V–) – 0.05 V < VCM < (V+) + 0.1 V, TA = –55°C to +125°C(1) VS = ±2.75 V 124 140
INPUT IMPEDANCE
zid Differential input impedance 100 || 2 MΩ || pF
zic Common-mode input impedance 60 || 4.5 TΩ || pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain (V–) + 0.15 V < VO < (V+) – 0.15 V, RLOAD = 10 kΩ 126 148 dB
(V–) + 0.15 V < VO < (V+) – 0.15 V, RLOAD = 10 kΩ, VS = 5.5 V
TA = –55°C to +125°C(1)		 120 126
(V–) + 0.25 V < VO < (V+) – 0.25 V, RLOAD = 2 kΩ 126 148
(V–) + 0.30 V < VO < (V+) – 0.30 V, RLOAD = 2 kΩ, VS = 5.5 V
TA = –55°C to +125°C(1)		 120 126
FREQUENCY RESPONSE
GBW Unity-gain bandwidth 10 MHz
SR Slew rate G = 1, 4 V step 5 V/µs
THD+N Total harmonic distortion + noise G = 1, f = 1 kHz, VO = 1 VRMS 0.0005%
tS Settling time To 0.1% VS = ±2.5 V, G = 1,
1-V step		 0.75 µs
To 0.01% VS = ±2.5 V, G = 1,
1-V step		 2 µs
tOR Overload recovery time VIN × G = VS 10 µs
OUTPUT
VO Voltage output swing from rail Positive rail No load 1 17 mV
RLOAD = 10 kΩ 5 20
RLOAD = 2 kΩ 20 50
Negative rail No load 5 17
RLOAD = 10 kΩ 10 20
RLOAD = 2 kΩ 40 60
RLOAD = 10 kΩ, both rails,TA = –55°C to +125°C(1) 10 25
ISC Short-circuit current VS = 5.5 V  ±60 mA
VS = 2.5 V  ±30 mA
ZO Open-loop output impedance f = 1 MHz, IO = 0 A 100 Ω
POWER SUPPLY
IQ  Quiescent current per amplifier VS = ±1.25 V (VS = 2.5 V) IO = 0 A 1.7 2.4 mA
IO = 0 A, TA = –55°C to +125°C(1) 1.7 2.4
VS = ±2.75 V (VS = 5.5 V) IO = 0 A 1.9 2.6
IO = 0 A, TA = –55°C to +125°C(1) 1.9 2.6
(1) Specification established from device population bench system measurements across multiple lots.