SNOU212 December   2024 LMG3650R025

 

  1.   1
  2.   Description
  3.   Features
  4.   Applications
  5.   5
  6. 1Evaluation Module Overview
    1. 1.1 Introduction
    2. 1.2 Kit Contents
  7. 2Hardware
    1. 2.1 LMG3650EVM-113 Daughter Card Variants
    2. 2.2 LMG3650EVM-113 Daughter Card Pin Description
    3. 2.3 LMG3650EVM-113 Daughter Card Block Diagram
    4. 2.4 LMG3650EVM-113 Fault
    5. 2.5 LMG3650EVM-113 Bootstrap Mode
    6. 2.6 LMG3650EVM-113 Heat Sink
  8. 3Implementation Results
    1. 3.1 Test Equipment
  9. 4Hardware Design Files
    1. 4.1 Schematics
    2. 4.2 PCB Layouts
    3. 4.3 Bill of Materials (BOM)
  10. 5Additional Information
    1. 5.1 Trademarks

Description

The LMG3650EVM-113 features two LMG3650R025 650V GaN FETs with an integrated driver and protection in a half-bridge configuration with all the required bias circuit and logic/power level shifting. Essential power stage and gate-driving, high-frequency current loops are fully enclosed on the board to minimize power loop parasitic inductance for reducing voltage overshoots and improving performance. The LMG3650EVM-113 is configured for a socket style external connection for easy interface with external power stages to run the LMG3650R025 in various applications. Refer to the LMG3650R025 data sheet before using this EVM.