TIDUET3 February 2021
The drain source breakdown voltage of the switching MOS is ≥ 600 V. The drain-to-source RMS current through the MOS is calculated as:
The key specifications of the MOS that must be taken into consideration are:
• Low RDS(on) for reducing the conduction loss
• Low Qg for fast turnon and turnoff in the hard switching in this topology
• Low output capacitance for reducing the switching loss