TIDUF23A May   2023  – May 2025

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Terminology
    2. 1.2 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
    3. 2.3 Highlighted Products
      1. 2.3.1  UCC5880-Q1
      2. 2.3.2  F29H859TU-Q1
      3. 2.3.3  UCC14240-Q1
      4. 2.3.4  UCC33421-Q1
      5. 2.3.5  AMC0386-Q1
      6. 2.3.6  AMC0381D-Q1
      7. 2.3.7  TCAN1043-Q1
      8. 2.3.8  ISO1042-Q1
      9. 2.3.9  ALM2403-Q1
      10. 2.3.10 LM5158-Q1
      11. 2.3.11 LM74202-Q1
    4. 2.4 System Design Theory
      1. 2.4.1 Microcontrollers
        1. 2.4.1.1 Microcontroller – C2000™
      2. 2.4.2 Isolated Bias Supply
      3. 2.4.3 Power Tree
        1. 2.4.3.1 Introduction
        2. 2.4.3.2 Power Tree Block Diagram
        3. 2.4.3.3 12V Distribution and Control
        4. 2.4.3.4 Gate Drive Supply
        5. 2.4.3.5 5V Supply Domain
        6. 2.4.3.6 Current and Position Sensing Power
  9. 3Hardware, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
      1. 3.1.1 Hardware Board Overview
        1. 3.1.1.1 Control Board
        2. 3.1.1.2 MCU SOM Evaluation Board – C2000™
        3. 3.1.1.3 Gate Driver and Bias Supply Board
        4. 3.1.1.4 DC Bus Voltage Sense
        5. 3.1.1.5 SiC Power Module
          1. 3.1.1.5.1 XM3 SiC Power Module
          2. 3.1.1.5.2 Module Power Terminals
          3. 3.1.1.5.3 Module Signal Terminals
          4. 3.1.1.5.4 Integrated NTC Temperature Sensor
        6. 3.1.1.6 Laminated Busing and DC Bus Capacitors
          1. 3.1.1.6.1 Discharge PCB
    2. 3.2 Test Results
      1. 3.2.1 Isolated Bias Supply
      2. 3.2.2 Isolated Gate Driver
      3. 3.2.3 Inverter System
  10. 4General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
      3. 5.1.3 PCB Layout Recommendations
        1. 5.1.3.1 Layout Prints
      4. 5.1.4 Altium Project
      5. 5.1.5 Gerber Files
      6. 5.1.6 Assembly Drawings
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6Revision History

3.2.2 Isolated Gate Driver

Double pulse test under 800V is carried out to evaluate the switching behavior for the different adjustable gate drive strengths. The following results show the difference between weak drive (5A) and strong drive (15A). The waveforms of the gate-source voltage, drain-source voltage and drain currents are shown in the following figures. The turn off energy is measured at the end of the first pulse, while the turn on energy is measured at the beginning of the second pulse. Table 3-5 shows the measurement results.

TIDM-02014 Double Pulse Test With Weak Drive StrengthFigure 3-12 Double Pulse Test With Weak Drive Strength
TIDM-02014 Turn-on Waveforms With Weak Drive StrengthFigure 3-14 Turn-on Waveforms With Weak Drive Strength
TIDM-02014 Turn-off Waveforms With Strong Drive StrengthFigure 3-16 Turn-off Waveforms With Strong Drive Strength
TIDM-02014 Turn-off Waveforms With Weak Drive StrengthFigure 3-13 Turn-off Waveforms With Weak Drive Strength
TIDM-02014 Double Pulse Test With Strong Drive StrengthFigure 3-15 Double Pulse Test With Strong Drive Strength
TIDM-02014 Turn-on Waveforms With Strong Drive StrengthFigure 3-17 Turn-on Waveforms With Strong Drive Strength
Table 3-5 Switching Energy Measurements
WEAK DRIVE (5A) STRONG DRIVE (15A)
Turn-off energy 5.65mJ 2.77mJ
Turn-on energy 6.46mJ 3.13mJ