TIDUFE6A September 2025 – December 2025
The low-side switch for CS2 is implemented using the CSD17571Q2, an N-channel NexFET™ Power MOSFET. This device is rated with a Drain-to-Source voltage of up to 30V and a Gate-to-Source voltage of ±20V. With a very low on-resistance of 20mΩ (VGS = 10V), the device is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package. The MOSFET supports a continuous drain current of 7.6A, which exceeds the 4A current limit of the CS1 high-side switch.