TIDUFE8A November   2025  – April 2026

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Backbone
      2. 2.2.2 TPLD1201-Q1 For Reverse ISCP Protection
      3. 2.2.3 48V to 12V Conversion
      4. 2.2.4 Jump Post
      5. 2.2.5 LP-AM263P
    3. 2.3 Highlighted Products
      1. 2.3.1  TPS1212-Q1 (48V)
      2. 2.3.2  TPS1HTC30-Q1 (48V)
      3. 2.3.3  TPS482H85-Q1 (48V)
      4. 2.3.4  TPS1214-Q1 (48V)
      5. 2.3.5  DRV8263-Q1 (48V)
      6. 2.3.6  DRV8363-Q1 (48V)
      7. 2.3.7  TPS2HCS10-Q1 (12V)
      8. 2.3.8  TPS4HC120-Q1 (12V)
      9. 2.3.9  DRV8245-Q1 (12V)
      10. 2.3.10 TPS1211-Q1 (12V)
      11. 2.3.11 TPLD1201-Q1
      12. 2.3.12 TXE8124-Q1
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Software Requirements
    3. 3.3 Test Setup
    4. 3.4 Test Results
  10. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Tools and Software
    3. 4.3 Documentation Support
    4. 4.4 Support Resources
    5. 4.5 Trademarks
  11. 5About the Author
  12. 6Revision History

2.3.1 TPS1212-Q1 (48V)

TPS1212-Q1 is a low IQ smart high-side driver with protection and diagnostics. The device has two integrated gate drives with 0.5A, 2A (GATE) and 100μA, 0.39A (G). With LPM low, the low power path is kept ON and the main FETs are turned OFF with IQ of 20µA (typ). The auto load wakeup threshold is adjusted using RBYPASS resistor placed across DRN and CS2–. IQ reduces to 1μA (typ) with EN/UVLO low. The device has accurate bidirectional current sensing (±2%) output (IMON) with adjustable I2t based overcurrent and short-circuit protection using an external RSNS resistor and FLT indication. Auto-retry and latch-off fault behavior can be configured. The device also has NTC-based temperature sensing (TMP) and monitoring output (ITMPO) output for overtemperature detection of external FETs.