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Product details

Parameters

Vin (Max) (V) 5.5 Operating temperature range (C) -40 to 85 Rating Catalog open-in-new Find other Battery monitors & balancers

Package | Pins | Size

SOIC (D) 8 19 mm² 3.91 x 4.9 open-in-new Find other Battery monitors & balancers

Features

  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation
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Description

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.

A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.

During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.

The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.

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Technical documentation

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Type Title Date
* Data sheet SRAM Nonvolatile Controller Unit datasheet Sep. 05, 1999
Technical article How to stack battery monitors for high-cell-count industrial applications Feb. 11, 2021

Design & development

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SOIC (D) 8 View options

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