ONET2804TLP

ACTIVE

28-Gbps low-power 4-channel limiting transimpedance amplifier with RSSI

Product details

Type Transimpedance and limiting amplifier Data rate (max) (Mbps) 28000 Supply current (typ) (µA) 30000 Supply current (max) (µA) 36000 Deterministic jitter (typ) (ps) 2 Operating temperature range (°C) -40 to 100
Type Transimpedance and limiting amplifier Data rate (max) (Mbps) 28000 Supply current (typ) (µA) 30000 Supply current (max) (µA) 36000 Deterministic jitter (typ) (ps) 2 Operating temperature range (°C) -40 to 100
DIESALE (Y) See data sheet
  • 4-Channel Multi-Rate Operation: Up to 28 Gbps
  • Dissipation at a 3-V Supply: 90 mW per Channel
  • Differential Transimpedance: 7.5 kΩ
  • Bandwidth: 17.5 GHz
  • Input-Referred Noise: 2 µArms
  • Input Overload Current: 3.2 mAPP
  • Programmable Output Voltage
  • Adjustable Gain and Bandwidth
  • Received Signal Strength Indicator (RSSI) for Each Channel
  • Isolation Between Channels (Die Only): 40 dB
  • Single Supply: 2.8 V to 3.3 V
  • Pad Control or 2-Wire Control
  • On-Chip Filter Capacitors
  • –40°C to +100°C Operation
  • Die Size: 3250 µm × 1450 µm, 750-µm Channel Pitch
  • 4-Channel Multi-Rate Operation: Up to 28 Gbps
  • Dissipation at a 3-V Supply: 90 mW per Channel
  • Differential Transimpedance: 7.5 kΩ
  • Bandwidth: 17.5 GHz
  • Input-Referred Noise: 2 µArms
  • Input Overload Current: 3.2 mAPP
  • Programmable Output Voltage
  • Adjustable Gain and Bandwidth
  • Received Signal Strength Indicator (RSSI) for Each Channel
  • Isolation Between Channels (Die Only): 40 dB
  • Single Supply: 2.8 V to 3.3 V
  • Pad Control or 2-Wire Control
  • On-Chip Filter Capacitors
  • –40°C to +100°C Operation
  • Die Size: 3250 µm × 1450 µm, 750-µm Channel Pitch

The ONET2804TLP device is a high-gain, limiting transimpedance amplifier (TIA) for parallel optical interconnects with data rates up to 28 Gbps. The device is used in conjunction with a 750-µm pitch photodiode array to convert an optical signal into a differential output voltage. An internal circuit provides the photodiode reverse bias voltage and senses the average photocurrent supplied to each photodiode.

The device can be used with pin control or a two-wire serial interface to allow control of the output amplitude, gain, bandwidth, and input threshold.

The ONET2804TLP provides 17.5-GHz bandwidth, a gain of 7.5 kΩ, an input-referred noise of 2 µArms, and a received signal strength indicator (RSSI) for each channel. 40-dB isolation between channels results in low crosstalk penalty in the receiver.

The device requires a single 2.8-V to 3.3-V supply and typically dissipates 90 mW per channel with a differential output amplitude of 300 mVPP. The device is characterized for operation from –40°C to +100°C and is available in die form with a 750-µm channel pitch.

The ONET2804TLP device is a high-gain, limiting transimpedance amplifier (TIA) for parallel optical interconnects with data rates up to 28 Gbps. The device is used in conjunction with a 750-µm pitch photodiode array to convert an optical signal into a differential output voltage. An internal circuit provides the photodiode reverse bias voltage and senses the average photocurrent supplied to each photodiode.

The device can be used with pin control or a two-wire serial interface to allow control of the output amplitude, gain, bandwidth, and input threshold.

The ONET2804TLP provides 17.5-GHz bandwidth, a gain of 7.5 kΩ, an input-referred noise of 2 µArms, and a received signal strength indicator (RSSI) for each channel. 40-dB isolation between channels results in low crosstalk penalty in the receiver.

The device requires a single 2.8-V to 3.3-V supply and typically dissipates 90 mW per channel with a differential output amplitude of 300 mVPP. The device is characterized for operation from –40°C to +100°C and is available in die form with a 750-µm channel pitch.

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* Data sheet ONET2804TLP Low-Power, 28-Gbps, 4-Channel Limiting TIA datasheet PDF | HTML Jul 13, 2017

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