• Excellent Output Drive Capability
  V_O = ± 2.5 V Min at R_L = 100 ,
  V_CC± = ± 5 V
  V_O = ± 12.5 V Min at R_L = 600 ,
  V_CC± = ± 15 V
• Low Supply Current...280 uA Typ
• Decompensated for High Slew Rate and
  Gain-Bandwidth Product
  A_VD = 0.5 Min
  Slew Rate = 10 V/us Typ
  Gain-Bandwidth Product = 6.5 MHz Typ
• Wide Operating Supply Voltage Range
  V_{CC ±} = ± 3.5 V to ± 18 V
• High Open-Loop Gain...280 V/mV Typ
• Low Offset Voltage...500 uV Max
• Low Offset Voltage Drift With Time
  0.04 uV/Month Typ
• Low Input Bias Current...5 pA Typ

TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
u POWER OPERATIONAL AMPLIFIERS

SLOS049D - NOVEMBER 1989 - REVISED MAY 1996

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.