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UCC27710

AKTIV

Halbbrücken-Gate-Treiber, 0,5/1,0 A, 620 V, mit Verriegelung

Produktdetails

Bootstrap supply voltage (max) (V) 700 Power switch IGBT, MOSFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 20 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 10 Rating Catalog Propagation delay time (µs) 0.14 Rise time (ns) 35 Fall time (ns) 16 Iq (mA) 0.25 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -11 Features Dead time control, Interlock Driver configuration CMOS compatible, Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 700 Power switch IGBT, MOSFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 20 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 10 Rating Catalog Propagation delay time (µs) 0.14 Rise time (ns) 35 Fall time (ns) 16 Iq (mA) 0.25 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -11 Features Dead time control, Interlock Driver configuration CMOS compatible, Dual, Noninverting, TTL compatible
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • High-Side and Low-Side Configuration
  • Dual Inputs With Output Interlock and 150-ns Deadtime
  • Fully Operational up to 620-V, 700-V Absolute Maximum on HB Pin
  • 10-V to 20-V VDD Recommended Range
  • Peak Output Current 0.5-A Source, 1.0-A Sink
  • dv/dt Immunity of 50 V/ns
  • Logic Operational up to –11 V on HS Pin
  • Negative Voltage Tolerance On Inputs of –5 V
  • Large Negative Transient Safe Operating Area
  • UVLO Protection for Both Channels
  • Small Propagation Delay (140 ns Typical)
  • Delay Matching (8 ns Typical)
  • Floating Channel Designed for Bootstrap Operation
  • Low Quiescent Current
  • TTL and CMOS Compatible Inputs
  • Industry Standard SOIC-8 Package
  • All Parameters Specified Over Temperature Range, –40 °C to +125 °C
  • High-Side and Low-Side Configuration
  • Dual Inputs With Output Interlock and 150-ns Deadtime
  • Fully Operational up to 620-V, 700-V Absolute Maximum on HB Pin
  • 10-V to 20-V VDD Recommended Range
  • Peak Output Current 0.5-A Source, 1.0-A Sink
  • dv/dt Immunity of 50 V/ns
  • Logic Operational up to –11 V on HS Pin
  • Negative Voltage Tolerance On Inputs of –5 V
  • Large Negative Transient Safe Operating Area
  • UVLO Protection for Both Channels
  • Small Propagation Delay (140 ns Typical)
  • Delay Matching (8 ns Typical)
  • Floating Channel Designed for Bootstrap Operation
  • Low Quiescent Current
  • TTL and CMOS Compatible Inputs
  • Industry Standard SOIC-8 Package
  • All Parameters Specified Over Temperature Range, –40 °C to +125 °C

The UCC27710 is a 620-V high-side and low-side gate driver with 0.5-A source, 1.0-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27710 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range from 10 V to 20 V, and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27710, each channel is controlled by its respective input pins, HI and LI.

The UCC27710 is a 620-V high-side and low-side gate driver with 0.5-A source, 1.0-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27710 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range from 10 V to 20 V, and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27710, each channel is controlled by its respective input pins, HI and LI.

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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt UCC27710 620-V, 0.5-A, 1.0-A High-Side Low-Side Gate Driver with Interlock datasheet (Rev. B) PDF | HTML 30.08.2018
Anwendungshinweis External vs. Internal Bootstrap Diode: Tradeoffs and Considerations PDF | HTML 05.01.2026
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Anwendungshinweis Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25.03.2024
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Anwendungshinweis Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08.09.2023
Anwendungshinweis Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17.02.2022
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Weitere Dokumente Troubleshooting gate drive circuits in automotive and industrial applications 23.03.2021
Anwendungshinweis Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12.05.2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Weitere Dokumente Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29.10.2018
Technischer Artikel How to achieve higher system robustness in DC drives, part 3: minimum input pulse PDF | HTML 19.09.2018
Technischer Artikel How to achieve higher system robustness in DC drives, part 2: interlock and deadti PDF | HTML 30.05.2018
Technischer Artikel How to achieve higher system robustness in DC drives, part 1: negative voltage PDF | HTML 17.04.2018

Design und Entwicklung

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Evaluierungsplatine

UCC27710EVM-005 — UCC27710 620 V, 0,5 A, 1,0 A, Highside-Lowside-Gate-Treiber – Evaluierungsmodul

Das UCC27710EVM-005 ist ausgelegt für die Evaluierung des UCC27710D, einem 620-V-Halbbrücken-Gate-Treiber mit angemessener Quell- und Senk-Spitzenstrombelastbarkeit. Mit diesem EVM kann der Treiber-IC anhand seines Datenblatts evaluiert werden. Das EVM kann auch als Auswahlleitfaden für (...)
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Simulationsmodell

UCC27710 PSpice Transient Model

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UCC27710 Unencrypted PSpice Transient Model

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