SN74CB3Q3345

ACTIVO

Interruptor de bus FET de 3.3 V, 1:1 (SPST) y 8 canales con 2 entradas de control

Detalles del producto

Protocols Analog Configuration 1:1 SPST Number of channels 8 Bandwidth (MHz) 500 Ron (typ) (mΩ) 4000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 1000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 3.5 CON (typ) (pF) 9 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 9000 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog Configuration 1:1 SPST Number of channels 8 Bandwidth (MHz) 500 Ron (typ) (mΩ) 4000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 1000 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 3.5 CON (typ) (pF) 9 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 9000 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
VQFN (RGY) 20 15.75 mm² (4.5 mm × 3.5 mm) TSSOP (PW) 20 41.6 mm² (6.5 mm × 6.4 mm) TVSOP (DGV) 20 32 mm² (5 mm × 6.4 mm) SSOP (DBQ) 20 51.9 mm² (8.65 mm × 6 mm)
  • High-bandwidth datapath (up to 500MHz)
  • 5V-tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 4Ω typical)
  • Rail-to-rail switching on data I/O ports
    • 0- to 5V switching with 3.3V VCC
    • 0- to 3.3V switching with 2.5V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input, output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
  • Fast switching frequency (f OE = 20MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.7mA typical)
  • VCC operating range from 2.3V to 3.6V
  • Data I/Os support 0- to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
  • Control inputs can be driven by TTL or 5V/3.3V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100mA per JESD 78, class II
  • ESD performance tested per JESD 22
    • 2000V human-body model (A114B, class II)
    • 1000V charged-device model (C101)
  • High-bandwidth datapath (up to 500MHz)
  • 5V-tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 4Ω typical)
  • Rail-to-rail switching on data I/O ports
    • 0- to 5V switching with 3.3V VCC
    • 0- to 3.3V switching with 2.5V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input, output capacitance minimizes loading and signal distortion (Cio(OFF) = 4pF typical)
  • Fast switching frequency (f OE = 20MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.7mA typical)
  • VCC operating range from 2.3V to 3.6V
  • Data I/Os support 0- to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V)
  • Control inputs can be driven by TTL or 5V/3.3V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100mA per JESD 78, class II
  • ESD performance tested per JESD 22
    • 2000V human-body model (A114B, class II)
    • 1000V charged-device model (C101)

The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized interface for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3345 is organized as an 8-bit bus switch with two output-enable (OE, OE) inputs. When OE is high or OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when powered down.

The device has isolation during power off. To maintain the high-impedance state during power up or power down, OE must be tied to VCC through a pullup resistor and OE must be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized interface for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3345 is organized as an 8-bit bus switch with two output-enable (OE, OE) inputs. When OE is high or OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when powered down.

The device has isolation during power off. To maintain the high-impedance state during power up or power down, OE must be tied to VCC through a pullup resistor and OE must be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos SN74CB3Q3345 8-Bit FET BUS Switch 2.5V, 3.3V Low-Voltage High-Bandwidth BUS Switch datasheet (Rev. C) PDF | HTML 21/08/2026
Nota sobre la aplicación Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2/06/2022
Nota sobre la aplicación Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 1/12/2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 6/01/2021

Diseño y desarrollo

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Modelo de simulación

HSPICE Model of SN74CB3Q3345 (Rev. A)

SCDJ022 (115 KB) - Modelo HSpice
Productos y hardware compatibles
Modelo de simulación

SN74CB3Q3345 IBIS Model

SCDM061.ZIP (25 KB) - Modelo IBIS
Productos y hardware compatibles
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
VQFN (RGY) 20 Ultra Librarian
TSSOP (PW) 20 Ultra Librarian
TVSOP (DGV) 20 Ultra Librarian
SSOP (DBQ) 20 Ultra Librarian

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