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SOT-23-THN (DYY) 16 8.4 mm² (4.2 mm × 2 mm)
  • VID XXXX
  • Space enhanced plastic
    • Supports Defense and Aerospace Applications
    • Operating temperature from –55°C to +125°C
    • Controlled baseline
    • Au (gold) bondwire and NiPdAu lead finish
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
    • Enhanced mold compound for low outgassing
    • Meets NASA ASTM E595 outgassing specification
  • Total ionizing dose characterized at 30krad (Si)
    • Total ionizing dose radiation lot acceptance (TID RLAT) for every wafer lot to 30krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 47MeV-cm2/mg
    • Single event transient (SET) characterization report available
  • Single supply range: 5V to 15V
  • Dual supply range: up to ±6V
  • Low capacitance: 3pF
  • Bidirectional signal path
  • Rail-to-rail operation
  • 1.8V logic compatible
  • Break-before-make switching
  • ESD protection HBM: 2000V
  • VID XXXX
  • Space enhanced plastic
    • Supports Defense and Aerospace Applications
    • Operating temperature from –55°C to +125°C
    • Controlled baseline
    • Au (gold) bondwire and NiPdAu lead finish
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
    • Enhanced mold compound for low outgassing
    • Meets NASA ASTM E595 outgassing specification
  • Total ionizing dose characterized at 30krad (Si)
    • Total ionizing dose radiation lot acceptance (TID RLAT) for every wafer lot to 30krad (Si)
  • Single-event effects (SEE) characterized:
    • Single event latch-up (SEL) immune to linear energy transfer (LET) = 47MeV-cm2/mg
    • Single event transient (SET) characterization report available
  • Single supply range: 5V to 15V
  • Dual supply range: up to ±6V
  • Low capacitance: 3pF
  • Bidirectional signal path
  • Rail-to-rail operation
  • 1.8V logic compatible
  • Break-before-make switching
  • ESD protection HBM: 2000V

The TMUX142-SEP device is a 2-channel, 4:1 general purpose complementary metal-oxide semiconductor (CMOS) multiplexer (MUX). The device works with a single supply (5V to 15V), dual supplies (up to ±6V), or asymmetric supplies (such as VDD = 6V, VSS = –3V). The wide supply voltage range allows the devices to be used in a broad array of applications in space. The two channels can be used for both differential and single-ended applications.

The TMUX142-SEP supports bidirectional analog signals on the source (Sx) and drain (Dx) pins ranging from VSS to VDD. All logic inputs have 1.8V logic compatible thresholds, which is compatible for both TTL and CMOS logic when operating with a valid supply voltage.

The TMUX142-SEP device is a 2-channel, 4:1 general purpose complementary metal-oxide semiconductor (CMOS) multiplexer (MUX). The device works with a single supply (5V to 15V), dual supplies (up to ±6V), or asymmetric supplies (such as VDD = 6V, VSS = –3V). The wide supply voltage range allows the devices to be used in a broad array of applications in space. The two channels can be used for both differential and single-ended applications.

The TMUX142-SEP supports bidirectional analog signals on the source (Sx) and drain (Dx) pins ranging from VSS to VDD. All logic inputs have 1.8V logic compatible thresholds, which is compatible for both TTL and CMOS logic when operating with a valid supply voltage.

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Diseño y desarrollo

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Placa de evaluación

16DYYPWEVM — Placa de prueba para encapsulados SOT-23 THIN (DYY) y TSSOP (PW)

La placa de prueba 16DYYPWEVM proporciona un espacio doble para encapsulados SOT-23 THIN (DYY) y TSSOP (PW).  Esta placa de prueba se utiliza para la creación rápida de prototipos y pruebas de circuitos integrados en encapsulados SOT-23 THIN (DYY) y TSSOP (PW) de 16 pines. 
Guía del usuario: PDF
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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SOT-23-THN (DYY) 16 Ultra Librarian

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