DRV3255-Q1
- AEC-Q100 Test Guidance for automotive applications:
- Device ambient temperature grade 0: –40°C to +150°C
- Device HBM ESD classification level 2
- Device CDM ESD classification level C4B
- Functional Safety-Compliant targeted
- Developed for functional safety applications
- Documentation to aid ISO 26262 system design will be available upon production release
- Systematic capability up to ASIL D targeted
- Three N-Channel half-bridge gate driver
- 3.5-A/4.5-A max peak gate drive current
- Power architecture optimized for 48-V applications
- 12-V/48-V split supply architecture
- 90-V MOSFET operating voltage range
- Bootstrap with charge pump for 100% duty cycle
- Device configurations options
- DRV3255-Q1: 3.5-A/4.5-A gate drive current
- DRV3256-Q1 (Preview):2-A/2.5-A gate drive current and 3x current shunt amplifiers
- Integrated configurable Active Short Circuit (ASC) function
- Low-side and High-side ASC support
- Device pin control available
- Fault handling capability
- Serial peripheral interface (SPI) with CRC
- Supports 3.3-V and 5-V logic inputs
- Advanced protection features
- Battery voltage monitors
- MOSFET VDS overcurrent monitors
- Rshunt overcurrent monitors
- MOSFET VGS gate fault monitors
- Analog built in self test
- Internal regulator and clock monitors
- Device thermal warning and shutdown
- Fault condition indicator pins
The DRV325x-Q1 family of devices are integrated three phase gate drivers for 48-V automotive motor drive applications. These devices are specifically designed to support high-power motor drive applications by providing 3.5-A peak source and 4.5-A peak sink gate drive currents, 90-V MOSFET transient over voltage support, and using a highly efficient bootstrap architecture that minimizes power losses and self-heating of the gate drivers. A charge pump allows for the gate drivers to support 100% PWM duty cycle control.
A wide range of diagnostics, monitoring, and protection features supports a robust motor drive system design. A highly configurable Active Short Circuit (ASC) function which enables selected external MOSFETs is integrated to achive the fast response to system faults and to eliminate the needs of external components.
Three low-side current shunt amplifiers are optionally provided (DRV3256-Q1) to support resistor based low-side current sensing.
Request samples & more information
The full data sheet is available. Request now
Preproduction samples are available (PDRV3255EPAPRQ1). Request now
Functional safety info is available. Request now
Evaluation module info is available. Request now
技術資料
| 種類 | タイトル | 最新の英語版をダウンロード | 日付 | |||
|---|---|---|---|---|---|---|
| * | データシート | DRV325x-Q1 Integrated 3-Phase 48-V Automotive Gate Driver Unit (GDU) with Advanced Protection and Diagnostics データシート | PDF | HTML | 2021年 1月 18日 | ||
| 技術記事 | Understanding brushless-DC motor systems, part 2 | 2021年 10月 20日 | ||||
| 技術記事 | Understanding brushless-DC motor systems, part 1 | 2021年 10月 18日 | ||||
| アプリケーション・ノート | System Design Considerations for High Power Motor Driver Applications | PDF | HTML | 2021年 6月 22日 | |||
| アプリケーション・ノート | DRV3255-Q1 を使用したパラレル MOSFET の駆動 (Rev. A) | 2021年 2月 22日 | ||||
| 技術記事 | How to optimize a motor-driver design for 48-V starter generators | 2021年 2月 17日 | ||||
| ホワイト・ペーパー | 機能的に安全な小型の 48V、30kW MHEV モーター駆動システムの構築方法 | PDF | HTML | 2021年 2月 15日 | |||
| 技術記事 | A basic brushless gate driver design – part 3: integrated vs. discrete half bridges | 2020年 12月 16日 |
設計および開発
追加の事項や他のリソースを参照するには、以下のタイトルをクリックすると、詳細ページを表示できます。
| パッケージ | ピン数 | ダウンロード |
|---|---|---|
| HTQFP (PAP) | 64 | オプションの表示 |
購入と品質
- RoHS
- REACH
- デバイスのマーキング
- リード端子の仕上げ / ボールの原材料
- MSL rating / リフローピーク温度
- MTBF/FIT 推定値
- 原材料組成
- 認定試験結果
- 継続的な信頼性モニタ試験結果
推奨製品には、この TI 製品に関連するパラメータ、評価基板、またはリファレンス・デザインが存在する可能性があります。