データシート
SN74BCT2827C
- BiCMOS Design Substantially Reduces ICCZ
- Output Ports Have Equivalent 25-
Resistors; No External Resistors Are Required
- Specifically Designed to Drive MOS DRAMs
- 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
- Flow-Through Architecture Optimizes PCB Layout
- Power-Up High-Impedance State
- ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
- Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.
The 3-state control gate is a 2-input AND gate with active-low
inputs so if either output-enable (
or 
) input is
high, all ten outputs are in the high-impedance state. The outputs
are also in the high-impedance state during power-up and power-down
conditions. The outputs remain in the high-impedance state while the
device is powered down.
The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.
技術資料
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| 上位の文書 | タイプ | タイトル | フォーマットオプション | 最新の英語版をダウンロード | 日付 | |
|---|---|---|---|---|---|---|
| * | データシート | 10-Bit Bus/MOS Memory Drivers With 3-State Outputs データシート (Rev. E) | 1991/01/01 |