SN74CB3Q16211

활성

3.3V, 1:1(SPST), 24채널 범용 FET 버스 스위치

지금 주문하기

데이터 시트

document-pdfAcrobat SN74CB3Q16211 24-Bit Switch 2.5-V/3.3-V Low-Voltage FET Bus Switch datasheet (Rev. A) (영어) PDF | HTML

SN74CB3Q16211

활성

데이터 시트

지금 주문하기

제품 상세 정보

Protocols

Analog

Configuration

1:1 SPST

Number of channels

24

Bandwidth (MHz)

500

Ron (typ) (mΩ)

5000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

1000

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

4

CON (typ) (pF)

10

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

9000

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

Protocols

Analog

Configuration

1:1 SPST

Number of channels

24

Bandwidth (MHz)

500

Ron (typ) (mΩ)

5000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Supply current (typ) (µA)

1000

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

64

COFF (typ) (pF)

4

CON (typ) (pF)

10

OFF-state leakage current (max) (µA)

1

Ron (max) (mΩ)

9000

VIH (min) (V)

1.7

VIL (max) (V)

0.8

Rating

Catalog

SSOP (DL)

56

190.647 mm² (18.42 mm × 10.35 mm)

TVSOP (DGV)

56

72.32 mm² (11.3 mm × 6.4 mm)

TSSOP (DGG)

56

113.4 mm² (14 mm × 8.1 mm)

Member of the Texas Instruments Widebus family
High-bandwidth data path (up to 500 MHz⁽¹⁾)
5-V tolerant I/Os with device powered up or powered down
Low and flat ON-state resistance (r_on) characteristics over operating range (r_on = 5 Ω typical)
Rail-to-rail switching on data I/O ports
- 0-V to 5-V switching with 3.3-V V_CC
- 0-V to 3.3-V switching with 2.5-V V_CC
Bidirectional data flow, with near-zero propagation delay
Low input or output capacitance minimizes loading and signal distortion (C_io(OFF) = 4 pF typical)
Fast switching frequency (f_OE = 20 MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (I_CC = 1 mA typical)
V_CC operating range from 2.3 V to 3.6 V
Data I/Os support 0-V to 5-V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs
I_off supports partial-power-down mode operation
Latch-up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports both digital and analog applications: PCI interface, differential signal interface, memory interleaving, bus isolation, low-distortion signal gating ⁽¹⁾

⁽¹⁾For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families .

Member of the Texas Instruments Widebus family
High-bandwidth data path (up to 500 MHz⁽¹⁾)
5-V tolerant I/Os with device powered up or powered down
Low and flat ON-state resistance (r_on) characteristics over operating range (r_on = 5 Ω typical)
Rail-to-rail switching on data I/O ports
- 0-V to 5-V switching with 3.3-V V_CC
- 0-V to 3.3-V switching with 2.5-V V_CC
Bidirectional data flow, with near-zero propagation delay
Low input or output capacitance minimizes loading and signal distortion (C_io(OFF) = 4 pF typical)
Fast switching frequency (f_OE = 20 MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (I_CC = 1 mA typical)
V_CC operating range from 2.3 V to 3.6 V
Data I/Os support 0-V to 5-V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs
I_off supports partial-power-down mode operation
Latch-up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports both digital and analog applications: PCI interface, differential signal interface, memory interleaving, bus isolation, low-distortion signal gating ⁽¹⁾

⁽¹⁾For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families .

The SN74CB3Q16211 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16211 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q16211 device is organized as two 12-bit bus switches with separate output-enable (1 OE, 2 OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE is low, the associated 12-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 12-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q16211 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16211 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q16211 device is organized as two 12-bit bus switches with separate output-enable (1 OE, 2 OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE is low, the associated 12-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 12-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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4개 모두 보기

상위 문서	유형	직함	형식 옵션	날짜
*	데이터 시트	SN74CB3Q16211 24-Bit Switch 2.5-V/3.3-V Low-Voltage FET Bus Switch datasheet (Rev. A)	PDF \| HTML	2022. 7. 21
	애플리케이션 노트	Selecting the Correct Texas Instruments Signal Switch (Rev. E)	PDF \| HTML	2022. 6. 2
	애플리케이션 노트	Multiplexers and Signal Switches Glossary (Rev. B)	PDF \| HTML	2021. 12. 1
	Application brief	Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C)	PDF \| HTML	2021. 1. 6