BUF08630
- 10-Bit Resolution
- 8-Channel P-Gamma
- 1-Channel P-VCOM
- High Slew Rate VCOM: 45 V/µs
- 16x Rewritable Nonvolatile Memory
- Two Independent Pin-Selectable Memory Banks
- Rail-to-Rail Output:
- 300 mV Min Swing-to-Rail (10 mA)
- > 300 mA Max IOUT
- Low Supply Current
- Supply Voltage: 9 V to 20 V
- Digital Supply: 2 V to 5.5 V
- Two-Wire Interface:
- Supports 400 kHz and 3.4 MHz
- 1/2 AVDD Capability
- APPLICATIONS
- TFT-LCD Reference Drivers
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The BUF08630 offers eight programmable gamma channels and one programmable VCOM channel.
The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory.
The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 150 mV of either supply rail with a 10-mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400 kHz, and high-speed data transfers up to 3.4 MHz.
The BUF08630 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08630 is available in a 20-pin QFN package, and is specified from –40°C to +95°C.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | Programmable Gamma-Voltage Generator w/Adjustable Gain Vcom & 1/2 AVDD Topology datasheet (Rev. A) | 2012/8/13 | |||
| 應用說明 | Driving Capacitive Loads with Gamma Buffers | 2012/11/20 |
設計與開發
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SBOC430 — BUF08630EVM User Software
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RGW) | 20 | Ultra Librarian |