BUF08832
- 10-BIT RESOLUTION
- 8-CHANNEL P-GAMMA
- 1-CHANNEL P-VCOM
- HIGH SLEW RATE VCOM: 45V/µs
- 16x REWRITABLE NONVOLATILE MEMORY
- TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS
- RAIL-TO-RAIL OUTPUT
- 300mV Min Swing-to-Rail (10mA)
- > 300mA Max IOUT
- LOW SUPPLY CURRENT
- SUPPLY VOLTAGE: 9V to 20V
- DIGITAL SUPPLY: 2V to 5.5V
- TWO-WIRE INTERFACE: Supports 400kHz and 3.4MHz
- APPLICATIONS
- TFT-LCD REFERENCE DRIVERS
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The BUF08832 offers eight programmable gamma channels and one programmable VCOM channel.
The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08832 supports up to 16 write operations to the on-chip memory.
The BUF08832 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 150mV of either supply rail with a 10mA load. All channels are programmed using a Two-Wire interface that supports standard operations up to 400kHz and high-speed data transfers up to 3.4MHz.
The BUF08832 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08832 is offered in a HTSSOP-20 PowerPAD package, and is specified from –40°C to +85°C.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | Programmable Gamma-Volt Generator & High Slew Rate Vcom w/ Integrated 2-Bank Mem datasheet (Rev. C) | 2011年 7月 12日 | |
| EVM User's guide | BUF08832EVM Users Guide (Rev. A) | 2016年 8月 3日 | ||
| Application note | Driving Capacitive Loads with Gamma Buffers | 2012年 11月 20日 |
設計與開發
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| HTSSOP (PWP) | 20 | Ultra Librarian |
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