CSD23382F4

現行

-12V、P 通道 NexFET™ 功率 MOSFET、單 LGA 0.6mm x 1mm、76mOhm、閘極 ESD 防護

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產品規格表

document-pdfAcrobat CSD23382F4 12-V P-Channel FemtoFET™ MOSFET datasheet (Rev. E) (英文) PDF | HTML

CSD23382F4

現行

產品規格表

立即訂購

產品詳細資料

VDS (V)

-12

VGS (V)

-8

Type

P-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

76

Rds(on) at VGS=2.5 V (max) (mΩ)

105

VGSTH typ (typ) (V)

-0.8

QG (typ) (nC)

1.04

QGD (typ) (nC)

0.15

QGS (typ) (nC)

0.5

ID - silicon limited at TC=25°C (A)

3.5

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

VDS (V)

-12

VGS (V)

-8

Type

P-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

76

Rds(on) at VGS=2.5 V (max) (mΩ)

105

VGSTH typ (typ) (V)

-0.8

QG (typ) (nC)

1.04

QGD (typ) (nC)

0.15

QGS (typ) (nC)

0.5

ID - silicon limited at TC=25°C (A)

3.5

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

PICOSTAR (YJC)

3

0.657225 mm² (1.035 mm × 0.635 mm)

Low on-resistance
Ultra-low Q_g and Q_gd
Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
Low profile
- 0.36-mm maximum height
Integrated ESD protection diode
- Rated > 2-kV HBM
- Rated > 2-kV CDM
Pb terminal plating
Halogen free
RoHS compliant

Low on-resistance
Ultra-low Q_g and Q_gd
Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
Low profile
- 0.36-mm maximum height
Integrated ESD protection diode
- Rated > 2-kV HBM
- Rated > 2-kV CDM
Pb terminal plating
Halogen free
RoHS compliant

This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

.

This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

.

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CSD25481F4

現行

-20V、P 通道 NexFET™ 功率 MOSFET、單 LGA 0.6mm x 1mm、105mOhm、閘極 ESD 防護 Alternate 20 V versus 12 V, higher resistance, lower leakage

技術文件

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重要文件	類型	標題	格式選項	日期
*	資料表	CSD23382F4 12-V P-Channel FemtoFET™ MOSFET datasheet (Rev. E)	PDF \| HTML	2022/1/24
	Application brief	Estimating Leakage Currents of Power MOSFETs	PDF \| HTML	2025/10/31
	應用說明	MOSFET Support and Training Tools (Rev. G)	PDF \| HTML	2025/10/27
	應用說明	Semiconductor and IC Package Thermal Metrics (Rev. D)	PDF \| HTML	2024/3/25
	應用說明	Using MOSFET Transient Thermal Impedance Curves In Your Design	PDF \| HTML	2023/12/18
	應用說明	Solving Assembly Issues with Chip Scale Power MOSFETs	PDF \| HTML	2023/12/14
	應用說明	Using MOSFET Safe Operating Area Curves in Your Design	PDF \| HTML	2023/3/13
	Application brief	Tips for Successfully Paralleling Power MOSFETs	PDF \| HTML	2022/5/31
	技術文章	What type of ESD protection does your MOSFET include?	PDF \| HTML	2020/6/22
	設計指南	FemtoFET Surface Mount Guide (Rev. D)		2016/7/7

設計與開發

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開發板

CSD1FPCHEVM-890 — FemtoFET P 通道評估模組

此 FemtoFET P-ch EVM 包括六片子卡，每片卡都包含不同的 FemtoFET p-ch 零件編號。子卡可讓工程師輕鬆連接和測試這些微型裝置。六個 FemtoFET 範圍從 12V 到 20V Vds，而裝置的尺寸包括 F3 (0.6x0.7mm)、F4 (0.6x1.0mm) 和 F5 (0.8x1.5mm)。

使用指南: PDF

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