INA148-Q1

現行

汽車類 +-200V 共模電壓差動放大器

立即訂購

產品規格表

document-pdfAcrobat INA148-Q1 ±200-V Common-Mode Voltage Difference Amplifier datasheet (Rev. B) (英文) PDF | HTML

INA148-Q1

現行

產品規格表

立即訂購

產品詳細資料

Number of channels

1

Vs (min) (V)

2.7

Vs (max) (V)

36

CMRR (min) (dB)

70

Common-mode input low (min) (V)

-200

Common-mode input high (max) (V)

200

Input offset (±) (max) (V)

0.005

Iq (typ) (mA)

0.6

Slew rate (typ) (V/µs)

1

Voltage gain (min) (V/V)

1

Voltage gain (max) (V/V)

1

Small-signal bandwidth (typ) (Hz)

100000

Rating

Automotive

Operating temperature range (°C)

-40 to 125

Gain drift (max) (ppm/°C)

3

Gain error (±) (max) (%)

0.076

Number of channels

1

Vs (min) (V)

2.7

Vs (max) (V)

36

CMRR (min) (dB)

70

Common-mode input low (min) (V)

-200

Common-mode input high (max) (V)

200

Input offset (±) (max) (V)

0.005

Iq (typ) (mA)

0.6

Slew rate (typ) (V/µs)

1

Voltage gain (min) (V/V)

1

Voltage gain (max) (V/V)

1

Small-signal bandwidth (typ) (Hz)

100000

Rating

Automotive

Operating temperature range (°C)

-40 to 125

Gain drift (max) (ppm/°C)

3

Gain error (±) (max) (%)

0.076

SOIC (D)

8

29.4 mm² (4.9 mm × 6 mm)

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to 125°C
  Ambient Operating Temperature Range
- Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C6
- Device MM ESD Classification Level M2
High Common-Mode Voltage
- 75 V at V_S = 5 V
- ±200 V at V_S = ±15 V
Fixed Differential Gain = 1 V/V
Low Quiescent Current: 260 µA
Wide Supply Range
- Single Supply: 2.7 V to 36 V
- Dual Supplies: ±1.35 V to ±18 V
Low Gain Error: 0.075% (Maximum)
Low Nonlinearity: 0.002% (Maximum)
High CMR: 86 dB
Surface-Mount 8-pin SOIC Package

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to 125°C
  Ambient Operating Temperature Range
- Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C6
- Device MM ESD Classification Level M2
High Common-Mode Voltage
- 75 V at V_S = 5 V
- ±200 V at V_S = ±15 V
Fixed Differential Gain = 1 V/V
Low Quiescent Current: 260 µA
Wide Supply Range
- Single Supply: 2.7 V to 36 V
- Dual Supplies: ±1.35 V to ±18 V
Low Gain Error: 0.075% (Maximum)
Low Nonlinearity: 0.002% (Maximum)
High CMR: 86 dB
Surface-Mount 8-pin SOIC Package

The INA148-Q1 is a precision, low-power, unity-gain difference amplifier with a high common-mode input voltage range. The device consists of a monolithic, precision, bipolar operational amplifier with a thin-film resistor network.

The on-chip resistors are laser trimmed for an accurate 1-V/V differential gain and high common-mode rejection. Excellent temperature tracking of the resistor network maintains high gain accuracy and common-mode rejection over temperature. The INA148-Q1 operates on single or dual supplies. These features make the INA148-Q1 suitable for HEV/EV and Powertrain applications, specifically in battery management systems.

The INA148-Q1 is available in an 8-pin SOIC, surface-mount package, and is specified for operation over the temperature range of –40°C to 125°C.

The INA148-Q1 is a precision, low-power, unity-gain difference amplifier with a high common-mode input voltage range. The device consists of a monolithic, precision, bipolar operational amplifier with a thin-film resistor network.

The on-chip resistors are laser trimmed for an accurate 1-V/V differential gain and high common-mode rejection. Excellent temperature tracking of the resistor network maintains high gain accuracy and common-mode rejection over temperature. The INA148-Q1 operates on single or dual supplies. These features make the INA148-Q1 suitable for HEV/EV and Powertrain applications, specifically in battery management systems.

The INA148-Q1 is available in an 8-pin SOIC, surface-mount package, and is specified for operation over the temperature range of –40°C to 125°C.

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