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LM25101

現行

具 8-V UVLO 和 TTL 輸入的 3-A、2-A 或 1-A 半橋閘極驅動器

產品詳細資料

Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.022 Rise time (ns) 8 Fall time (ns) 8 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Noninverting
Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 3 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.022 Rise time (ns) 8 Fall time (ns) 8 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Noninverting
WSON (DPR) 10 16 mm² (4 mm × 4 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) HSOIC (DDA) 8 29.4 mm² (4.9 mm × 6 mm) HVSSOP (DGN) 8 14.7 mm² (3 mm × 4.9 mm) WSON (NGT) 8 16 mm² (4 mm × 4 mm)
  • Independent High and Low Driver Logic Inputs
  • Bootstrap Supply Voltage up to 100-V DC
  • Drives Both a High-Side and Low-Side N-Channel MOSFETs
  • Fast Propagation Times (25 ns Typical)
  • Drives 1000-pF Load With 8-ns Rise and Fall Times
  • Excellent Propagation Delay Matching (3 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Pin Compatible With HIP2100 and HIP2101
  • Independent High and Low Driver Logic Inputs
  • Bootstrap Supply Voltage up to 100-V DC
  • Drives Both a High-Side and Low-Side N-Channel MOSFETs
  • Fast Propagation Times (25 ns Typical)
  • Drives 1000-pF Load With 8-ns Rise and Fall Times
  • Excellent Propagation Delay Matching (3 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Pin Compatible With HIP2100 and HIP2101

The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.

These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.

The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.

These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM25101 3-A, 2-A, and 1-A 80-V Half-Bridge Gate Drivers datasheet (Rev. C) PDF | HTML 2016/9/28
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024/1/24
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
應用說明 Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021/4/7
應用說明 Understanding and comparing peak current capability of gate drivers PDF | HTML 2021/3/30
應用說明 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020/5/12
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019/10/22
應用說明 Maximizing DC/DC converter designs with UCC27282 2019/1/18
應用說明 UCC27282 Improving motor drive system robustness 2019/1/11
更多文件說明 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018/10/29

設計與開發

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開發板

UCC27288EVM — UCC27288 100-V、3-A、8-V UVLO 半橋閘極驅動器評估模組

UCC27288EVM 專為評估 UCC27288D 而設計,這是一款具備 2.5-A 峰值電流源和 3.5-A 峰值汲極電流能力的 100-V 半橋閘極驅動器。此 EVM 可做為驅動功率 MOSFET 的參考設計,驅動電壓高達 20-V。
使用指南: PDF
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參考設計

TIDA-00121 — 具有整合式 MPPT 充電器的太陽能街道照明參考設計

此設計為配備 700mA LED 驅動器的 12A 最大功率點追蹤 (MPPT) 太陽能充電控制器。其目標用途為低功耗太陽能充電器和 LED 驅動器解決方案,例如太陽能街道照明。此設計可透過 12V 面板輸出高達 10A 的輸出電流,並為 12V 電池充電。然而,只要將 MOSFET 變更為 60V 額定零件,即可輕鬆調整為 24V 系統。此外,此設計可驅動多達 15 個與 700mA 電流串聯的 LED。您可在最小硬體變更下,針對高達 1.1A 的 LED 電流進行設計調整。TI 提供適合低功率負載的完整太陽能反相系統。另外此設計也納入實際考量,例如逆流電池防護、12V (...)

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
WSON (DPR) 10 Ultra Librarian
SOIC (D) 8 Ultra Librarian
HSOIC (DDA) 8 Ultra Librarian
HVSSOP (DGN) 8 Ultra Librarian
WSON (NGT) 8 Ultra Librarian

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