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LM5101B

現行

具 8-V UVLO 和 TTL 輸入的 2-A、100-V 半橋閘極驅動器

現在提供此產品的更新版本

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UCC27201A 現行 具有 8V UVLO、負電壓處理和 TTL 輸入的 3A、120V 半橋閘極驅動器 Newer, higher current version available with improved specs.

產品詳細資料

Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 2 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.025 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Independent
Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 14 Peak output current (A) 2 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.025 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) WSON (DPR) 10 16 mm² (4 mm × 4 mm)
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFETs
  • Independent High- and Low-Driver Logic Inputs
  • Bootstrap Supply Voltage up to 118 V DC
  • Fast Propagation Times (25-ns Typical)
  • Drives 1000-pF Load With 8-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (3-ns
    Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Pin Compatible With HIP2100/HIP2101
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFETs
  • Independent High- and Low-Driver Logic Inputs
  • Bootstrap Supply Voltage up to 118 V DC
  • Fast Propagation Times (25-ns Typical)
  • Drives 1000-pF Load With 8-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (3-ns
    Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Pin Compatible With HIP2100/HIP2101

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

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UCC27289 現行 具有 8V UVLO 和啟用功能的車用 120V 3A 半橋閘極驅動器 This product offers better negative voltage handling, tighter propagation delays, higher drive current, and a 3mm x 3mm package option

技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM5100A/B/C, LM5101A/B/C 3-A, 2-A, and 1-A High-Voltage, High-Side and Low-Side Gate Drivers datasheet (Rev. Q) PDF | HTML 2015/12/3
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024/1/24
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
應用說明 Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021/4/7
應用說明 Understanding and comparing peak current capability of gate drivers PDF | HTML 2021/3/30
應用說明 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020/5/12
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019/10/22
應用說明 Maximizing DC/DC converter designs with UCC27282 2019/1/18
應用說明 UCC27282 Improving motor drive system robustness 2019/1/11
更多文件說明 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018/10/29
應用說明 AN-1317 Selection of External Bootstrap Diode for LM510X Devices (Rev. B) 2018/5/4

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC27288EVM — UCC27288 100-V、3-A、8-V UVLO 半橋閘極驅動器評估模組

UCC27288EVM 專為評估 UCC27288D 而設計,這是一款具備 2.5-A 峰值電流源和 3.5-A 峰值汲極電流能力的 100-V 半橋閘極驅動器。此 EVM 可做為驅動功率 MOSFET 的參考設計,驅動電壓高達 20-V。
使用指南: PDF
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模擬型號

LM5101B PSpice Transient Model

SNOM365.ZIP (77 KB) - PSpice 模型
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模擬型號

LM5101B TINA-TI Transient Reference Design

SNOM357.TSC (780 KB) - TINA-TI 參考設計
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模擬型號

LM5101B TINA-TI Transient Spice Model

SNOM358.ZIP (12 KB) - TINA-TI Spice 模型
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模擬型號

LM5101B Unencrypted PSpice Transient Model

SNOM568.ZIP (2 KB) - PSpice 模型
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計算工具

SNVR521 — LM51xx Schematic Review Template

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參考設計

TIDA-01292 — 適用於低頻離線 UPS 和逆變器且不帶散熱器的 650W 功率級參考設計

此參考設計為 650-W 逆變器功率級,專為低頻(基於變壓器)、單相 UPS(由 12-V 電池供電)而設計。此設計利用 SON5x6 封裝且具有極低 RDS (on) 與低閘極電荷 (Qg) 的 TI SMD MOSFET,實現小外型尺寸與高效率實作方案。透過在全橋式功率級的各腳上並聯使用兩個裝置,該功率級消除了散熱器的需求,進而降低整體系統成本。

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (D) 8 Ultra Librarian
WSON (DPR) 10 Ultra Librarian

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