LM74720-Q1
- AEC-Q100 qualified with the following results
- Device temperature grade 1: –40°C to +125°C ambient operating temperature range
- Device HBM ESD classification level 2
- Device CDM ESD classification level C4B
- 3-V to 65-V input range
- Reverse input protection down to –65 V
- Low quiescent current, 35 µA (max) in operation
- Low 3.3-µA (max) shutdown current (EN = Low)
- Ideal diode operation with 17-mV A to C forward voltage drop regulation
- Drives external back-to-back N-Channel MOSFETs
- Integrated 29-mA boost regulator
- Fast response to reverse current blocking: 0.5 µs
- Active rectification up to 100 kHz
- Adjustable overvoltage protection
- Meets automotive ISO7637 transient requirements with a suitable TVS diode
- Available in space saving 12-pin WSON package
- Pin-to-pin compatible with LM74721-Q1
The LM74720-Q1 ideal diode controller drives and controls external back-to-back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong boost regulator with fast turn ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124 where an ECU is subjected to input short interruptions and AC superimpose input signals up to 100-kHz frequency. Low Quiescent Current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cut-off protection feature for load dump protection.
您可能會感興趣的類似產品
功能相同，但針腳輸出與所比較的裝置不同。
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LM74720-Q1 Low IQ Automotive Ideal Diode Controller with Active Rectification and Load Dump Protection datasheet (Rev. B) | PDF | HTML | 2022/3/29 | ||
| 功能安全資訊 | LM74720-Q1 Functional Safety FIT Rate, FMD and Pin FMA | PDF | HTML | 2025/5/27 | |||
| Product overview | Mobileye EyeQ™6H – Discrete Power Tree | PDF | HTML | 2024/11/7 | |||
| 技術文章 | 3 ways to design a low quiescent-current (Iq) automotive reverse battery protectio | PDF | HTML | 2021/11/18 | |||
| 應用說明 | Basics of Ideal Diodes (Rev. B) | PDF | HTML | 2021/10/5 | |||
| Application brief | Active Rectification and its Advantages in Automotive ECU Designs | PDF | HTML | 2021/9/29 | |||
| 類比設計期刊 | Automotive EMC-compliant reverse-battery protection with ideal-diode controllers | 2020/9/22 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
LM7472EVM — 適用於理想二極體控制器的 LM74720-Q1 與 LM74722-Q1 評估模組
TI 的評估模組 LM7472EVM 可協助設計人員評估 LM74720-Q1和 LM74722-Q1 理想二極體控制器在反向電池保護應用中的運作及性能。此評估模組展示 LM7472x-Q1 如何搭配用於低 IQ 和快速瞬態回應的整合式升壓穩壓器，控制兩個背對背 N 通道功率 MOSFET，其先連接理想二極體 MOSFET，緊接著再連接用於切換輸出及電源路徑切斷的第二個 MOSFET。
FET-INRUSH-SOA-CALC — FET SOA margin calculator for dvdt based startup
TIPA-020000 — Mobileye EyeQ™6H 電源供應設計
此電源設計是適用於 Mobileye EyeQ™6H SoC 的離散式電源樹狀結構測試報告摘要。自動駕駛輔助系統 (ADAS) 等汽車應用採用 Mobileye EyeQ™6H 等 ADAS 網域控制器處理器。這些精密的處理器需要在極低的電壓下具有非常高的電流。這些處理器也需要非常快速的輸出電壓暫態響應，以因應處理器負載電流的步進變化。此德州儀器設計以有效率、符合成本效益的方式滿足快速暫態響應的嚴格要求。
這種離散式方法可實現負載點轉換器最佳放置，同時仍可提供具最小輸出電容的小型設計尺寸。
多通道電壓監控器用於監控所有 SoC 相關的電源軌。電源排序可透過任何外部安全 MCU 實作。
此電源設計的 (...)
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| WSON (DRR) | 12 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。