OPA4H199-SEP

現行

Radiation-tolerant, quad, 40V 4.5MHz rail-to-rail input and output operational amplifier

產品詳細資料

Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.7 Rail-to-rail In, Out GBW (typ) (MHz) 4.5 Slew rate (typ) (V/µs) 21 Vos (offset voltage at 25°C) (max) (mV) 0.895 Iq per channel (typ) (mA) 0.56 Vn at 1 kHz (typ) (nV√Hz) 10.8 Rating Space Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 0.3 Features EMI Hardened, High Cload Drive, MUX Friendly, Small Size CMRR (typ) (dB) 130 Iout (typ) (A) 0.075 Architecture CMOS Radiation, TID (typ) (krad) 30 Radiation, SEL (MeV·cm2/mg) 43 Input common mode headroom (to negative supply) (typ) (V) -0.01 Input common mode headroom (to positive supply) (typ) (V) 0.01 Output swing headroom (to negative supply) (typ) (V) 0.025 Output swing headroom (to positive supply) (typ) (V) -0.025
Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.7 Rail-to-rail In, Out GBW (typ) (MHz) 4.5 Slew rate (typ) (V/µs) 21 Vos (offset voltage at 25°C) (max) (mV) 0.895 Iq per channel (typ) (mA) 0.56 Vn at 1 kHz (typ) (nV√Hz) 10.8 Rating Space Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 0.3 Features EMI Hardened, High Cload Drive, MUX Friendly, Small Size CMRR (typ) (dB) 130 Iout (typ) (A) 0.075 Architecture CMOS Radiation, TID (typ) (krad) 30 Radiation, SEL (MeV·cm2/mg) 43 Input common mode headroom (to negative supply) (typ) (V) -0.01 Input common mode headroom (to positive supply) (typ) (V) 0.01 Output swing headroom (to negative supply) (typ) (V) 0.025 Output swing headroom (to positive supply) (typ) (V) -0.025
SOT-23-THN (DYY) 14 13.692 mm² (4.2 mm × 3.26 mm)
  • Radiation hardened
    • Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C
    • ELDRS free to 30 krad(Si)
    • Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si)
  • Supports defense, aerospace, and medical applications
    • Single controlled baseline
    • One fabrication, assembly and test site
    • Gold wire
    • NiPdAu lead finish
    • Available in military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification
    • Product traceability
    • Enhanced mold compound for low outgassing
  • Low offset voltage: ±125 µV
  • Low noise: 10.8 nV/√Hz at 1 kHz
  • High common-mode rejection: 130 dB
  • Low bias current: ±10 pA
  • Rail-to-rail input and output
  • Wide bandwidth: 4.5 MHz GBW
  • High slew rate: 21 V/µs
  • High capacitive load drive: 1 nF
  • MUX-friendly/comparator inputs
  • Low quiescent current: 560 µA per amplifier
  • Wide supply: ±1.35 V to ±20 V, 2.7 V to 40 V
  • Robust EMIRR performance: EMI/RFI filters on input and supply pins
  • Radiation hardened
    • Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C
    • ELDRS free to 30 krad(Si)
    • Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si)
  • Supports defense, aerospace, and medical applications
    • Single controlled baseline
    • One fabrication, assembly and test site
    • Gold wire
    • NiPdAu lead finish
    • Available in military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification
    • Product traceability
    • Enhanced mold compound for low outgassing
  • Low offset voltage: ±125 µV
  • Low noise: 10.8 nV/√Hz at 1 kHz
  • High common-mode rejection: 130 dB
  • Low bias current: ±10 pA
  • Rail-to-rail input and output
  • Wide bandwidth: 4.5 MHz GBW
  • High slew rate: 21 V/µs
  • High capacitive load drive: 1 nF
  • MUX-friendly/comparator inputs
  • Low quiescent current: 560 µA per amplifier
  • Wide supply: ±1.35 V to ±20 V, 2.7 V to 40 V
  • Robust EMIRR performance: EMI/RFI filters on input and supply pins

The OPA4H199-SEP is a high voltage (40 V) general purpose operational amplifiers for space application. The device offers exceptional DC precision and AC performance, including rail-to-rail input/output, low offset (±125 µV, typ), low offset drift (±0.3 µV/°C, typ), low noise (10.8 nV/√Hz and 1.8 µVPP), and 4.5-MHz bandwidth.

Unique features such as differential and common-mode input-voltage range to the supply rail, high output current (±75 mA), high slew rate (21 V/µs), and high capacitive load drive (1 nF) make the OPA4H199-SEP a robust, high-performance operational amplifier for high-voltage space applications.

The OPA4H199-SEP is available in a small-sized, radiation-hardened plastic, 14-pin SOT-23 (DYY) package. The SOT-23 (DYY) package has a body size that is less than 1/5th of the size of traditional 14-pin ceramic packages. The OPA4H199-SEP is specified from –55°C to 125°C.

The OPA4H199-SEP is a high voltage (40 V) general purpose operational amplifiers for space application. The device offers exceptional DC precision and AC performance, including rail-to-rail input/output, low offset (±125 µV, typ), low offset drift (±0.3 µV/°C, typ), low noise (10.8 nV/√Hz and 1.8 µVPP), and 4.5-MHz bandwidth.

Unique features such as differential and common-mode input-voltage range to the supply rail, high output current (±75 mA), high slew rate (21 V/µs), and high capacitive load drive (1 nF) make the OPA4H199-SEP a robust, high-performance operational amplifier for high-voltage space applications.

The OPA4H199-SEP is available in a small-sized, radiation-hardened plastic, 14-pin SOT-23 (DYY) package. The SOT-23 (DYY) package has a body size that is less than 1/5th of the size of traditional 14-pin ceramic packages. The OPA4H199-SEP is specified from –55°C to 125°C.

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