SM74101
- Renewable Energy Grade
- Compound CMOS and Bipolar Outputs Reduce
Output Current Variation - 7A sink/3A Source Current
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns/12 ns Rise/Fall
with 2 nF Load) - Inverting and Non-Inverting Inputs Provide Either
Configuration with a Single Device - Supply Rail Under-Voltage Lockout Protection
- Dedicated Input Ground (IN_REF) for Split Supply
or Single Supply Operation - Power Enhanced 6-Pin WSON Package (3.0mm ×
3.0mm) - Output Swings from VCC to VEE which can be
Negative Relative to Input Ground
The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package (SOT23 equivalent footprint), with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The SM74101 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | SM74101 Tiny 7A MOSFET Gate Driver datasheet (Rev. B) | PDF | HTML | 2015年 3月 25日 |
| Application note | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 2024年 1月 22日 | |
| Application note | Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) | PDF | HTML | 2023年 9月 8日 | |
| Application note | Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver | PDF | HTML | 2021年 11月 10日 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 | ||
| Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019年 1月 18日 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||
| Application brief | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 2018年 3月 16日 |
設計與開發
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| WSON (NGG) | 6 | Ultra Librarian |
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