產品詳細資料

Protocols Analog Configuration 1:1 SPST Number of channels 20 Bandwidth (MHz) 200 Ron (typ) (mΩ) 3000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 5.5 CON (typ) (pF) 15.5 OFF-state leakage current (max) (µA) 10 Ron (max) (mΩ) 12000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog Configuration 1:1 SPST Number of channels 20 Bandwidth (MHz) 200 Ron (typ) (mΩ) 3000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 5.5 CON (typ) (pF) 15.5 OFF-state leakage current (max) (µA) 10 Ron (max) (mΩ) 12000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
TSSOP (DGG) 48 101.25 mm² (12.5 mm × 8.1 mm) SSOP (DL) 48 164.358 mm² (15.88 mm × 10.35 mm)
  • Member of the Texas Instruments Widebus™ Family
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
  • Supports PCI Hot Plug
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Widebus is a trademark of Texas Instruments.

  • Member of the Texas Instruments Widebus™ Family
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
  • Supports PCI Hot Plug
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Widebus is a trademark of Texas Instruments.

The SN74CBT16800C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16800C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise.

The SN74CBT16800C is organized as two 10-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 10-bit bus switches or as one 20-bit bus switch. When OE\ is low, the associated 10-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-k resistor when OE\ is high, or if the device is powered down (VCC = 0 V).

During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT16800C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16800C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise.

The SN74CBT16800C is organized as two 10-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 10-bit bus switches or as one 20-bit bus switch. When OE\ is low, the associated 10-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-k resistor when OE\ is high, or if the device is powered down (VCC = 0 V).

During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 SN74CBT16800C datasheet (Rev. C) 2003/10/15
應用說明 Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022/6/2
應用說明 Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021/12/1
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021/1/6

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SN74CBT16800C IBIS Model (Rev. A)

SCDM023 (135 KB) - IBIS 模型
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