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一般用途運算放大器

TLC082-Q1

現行

汽車級、雙路、16-V、10-MHz 運算放大器

立即訂購
產品規格表

現在提供此產品的更新版本

open-in-new 比較替代產品
功能相同，但針腳輸出與所比較的裝置不同。
TLV9162-Q1 現行 車用、雙路、16-V、11-MHz、軌至軌輸入和輸出運算放大器 Rail-to-rail I/O, higher GBW (11 MHz), faster slew rate (33 V/us), lower offset voltage (1 mV), lower noise (6.8 nV/√Hz)

TLC082-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V- GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 16 Vos (offset voltage at 25°C) (max) (mV) 1.9 Iq per channel (typ) (mA) 1.8 Vn at 1 kHz (typ) (nV√Hz) 8.5 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.2 Input bias current (max) (pA) 50 CMRR (typ) (dB) 110 Iout (typ) (A) 0.1 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.18 Output swing headroom (to positive supply) (typ) (V) -0.7
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V- GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 16 Vos (offset voltage at 25°C) (max) (mV) 1.9 Iq per channel (typ) (mA) 1.8 Vn at 1 kHz (typ) (nV√Hz) 8.5 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.2 Input bias current (max) (pA) 50 CMRR (typ) (dB) 110 Iout (typ) (A) 0.1 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.18 Output swing headroom (to positive supply) (typ) (V) -0.7
HVSSOP (DGN) 8 14.7 mm² (3 mm × 4.9 mm)
  • Wide Bandwidth: 10 MHz
  • High-Output Drive
    • IOH: 57 mA at VDD –1.5 V
    • IOL: 55 mA at 0.5 V
  • High Slew Rate
    • SR+: 16 V/μs
    • SR−: 19 V/μs
  • Wide Supply Range: 4.5 V to 16 V
  • Supply Current: 1.9 mA per Channel
  • Low Input Noise Voltage: 8.5 nV√Hz
  • Input Offset Voltage: 60 μV
  • Ultra-Small 8-Pin MSOP-PowerPAD Package for TLC082-Q1

All trademarks are the property of their respective owners.

  • Wide Bandwidth: 10 MHz
  • High-Output Drive
    • IOH: 57 mA at VDD –1.5 V
    • IOL: 55 mA at 0.5 V
  • High Slew Rate
    • SR+: 16 V/μs
    • SR−: 19 V/μs
  • Wide Supply Range: 4.5 V to 16 V
  • Supply Current: 1.9 mA per Channel
  • Low Input Noise Voltage: 8.5 nV√Hz
  • Input Offset Voltage: 60 μV
  • Ultra-Small 8-Pin MSOP-PowerPAD Package for TLC082-Q1

All trademarks are the property of their respective owners.

The TLC08x-Q1 is the first general purpose operational amplifier to highlight TI's BiCMOS technology. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and DC performance. With performance rated from 4.5 V to 16 V across an automotive temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications.

Developed in TI’s patented LBC3 BiCMOS process, the BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x-Q1 BiFET predecessors include a bandwidth of 10 MHz and voltage noise of 8.5 nV/√Hz. These features enable the TLC08x-Q1 devices to be suitable for ADAS (such as short-range radar) and body in automotive. The TLC082-Q1 is also suitable in infotainment and cluster as a pre amp in car audio applications.

DC improvements include an ensured VICR that includes ground, a factor of four reduction in input offset voltage down to 1.5 mV (maximum), and a power-supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x-Q1 as the ideal high-performance, general-purpose operational amplifier family.

For all available packages, see the orderable addendum at the end of the data sheet.

The TLC08x-Q1 is the first general purpose operational amplifier to highlight TI's BiCMOS technology. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and DC performance. With performance rated from 4.5 V to 16 V across an automotive temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications.

Developed in TI’s patented LBC3 BiCMOS process, the BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x-Q1 BiFET predecessors include a bandwidth of 10 MHz and voltage noise of 8.5 nV/√Hz. These features enable the TLC08x-Q1 devices to be suitable for ADAS (such as short-range radar) and body in automotive. The TLC082-Q1 is also suitable in infotainment and cluster as a pre amp in car audio applications.

DC improvements include an ensured VICR that includes ground, a factor of four reduction in input offset voltage down to 1.5 mV (maximum), and a power-supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x-Q1 as the ideal high-performance, general-purpose operational amplifier family.

For all available packages, see the orderable addendum at the end of the data sheet.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TLC08x-Q1 Wide-Bandwidth High-Output-Drive Single-Supply Operational Amplifiers datasheet (Rev. E) PDF | HTML 2016/10/12
電子書 The Signal e-book: A compendium of blog posts on op amp design topics PDF | HTML 2017/3/28
應用說明 TLC08x and TLC08xA EMI Immunity Performance 2013/8/19

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