TLC272B

現行

雙路、16-V、2-MHz、2-mV 偏移電壓、輸入至 V- 運算放大器

立即訂購

產品規格表

document-pdfAcrobat LinCMOS Precision Dual Operational-Amplifiers datasheet (Rev. E) (英文)

勘誤表

document-pdfAcrobat
Errata for TLC272/2A/2B/2Y/77 Data Sheet SLOS091E: Error in Elec Characteristics (英文)

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TLV9102

現行

雙路、16V、1.1MHz、低功耗運算放大器 Pin-to-pin upgrade with improved performance: lower Vos(1.5mV), higher slew rate(4.5V/us) and output current(80mA)

TLC272B

現行

產品規格表

立即訂購

產品詳細資料

Number of channels

2

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

16

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

3

Rail-to-rail

In to V-

GBW (typ) (MHz)

2

Slew rate (typ) (V/µs)

3.6

Vos (offset voltage at 25°C) (max) (mV)

2

Iq per channel (typ) (mA)

0.7

Vn at 1 kHz (typ) (nV√Hz)

25

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Offset drift (typ) (µV/°C)

1.8

Input bias current (max) (pA)

60

CMRR (typ) (dB)

80

Iout (typ) (A)

0.01

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

-0.3

Input common mode headroom (to positive supply) (typ) (V)

-0.8

Output swing headroom (to negative supply) (typ) (V)

0.03

Output swing headroom (to positive supply) (typ) (V)

-1.2

Number of channels

2

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

16

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

3

Rail-to-rail

In to V-

GBW (typ) (MHz)

2

Slew rate (typ) (V/µs)

3.6

Vos (offset voltage at 25°C) (max) (mV)

2

Iq per channel (typ) (mA)

0.7

Vn at 1 kHz (typ) (nV√Hz)

25

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Offset drift (typ) (µV/°C)

1.8

Input bias current (max) (pA)

60

CMRR (typ) (dB)

80

Iout (typ) (A)

0.01

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

-0.3

Input common mode headroom (to positive supply) (typ) (V)

-0.8

Output swing headroom (to negative supply) (typ) (V)

0.03

Output swing headroom (to positive supply) (typ) (V)

-1.2

PDIP (P)

8

92.5083 mm² 9.81 x 9.43

SOIC (D)

8

29.4 mm² 4.9 x 6

SOP (PS)

8

48.36 mm² 6.2 x 7.8

Trimmed Offset Voltage:
TLC277 . . . 500 uV Max at 25°C, V_DD = 5 V
Input Offset Voltage Drift ...Typically 0.1 uV/Month, Including the First 30 Days
Wide Range of Supply Voltages Over Specified Temperature Range:
       0°C to 70°C ...3 V to 16 V
       –40°C to 85°C ...4 V to 16 V
       –55°C to 125°C ...4 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)
Low Noise ...Typically 25 nV/Hz at f = 1 kHz
Output Voltage Range Includes Negative Rail
High Input impedance ...10¹² Typ
ESD-Protection Circuitry
Small-Outline Package Option Also Available in Tape and Reel
Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments.

Trimmed Offset Voltage:
TLC277 . . . 500 uV Max at 25°C, V_DD = 5 V
Input Offset Voltage Drift ...Typically 0.1 uV/Month, Including the First 30 Days
Wide Range of Supply Voltages Over Specified Temperature Range:
       0°C to 70°C ...3 V to 16 V
       –40°C to 85°C ...4 V to 16 V
       –55°C to 125°C ...4 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)
Low Noise ...Typically 25 nV/Hz at f = 1 kHz
Output Voltage Range Includes Negative Rail
High Input impedance ...10¹² Typ
ESD-Protection Circuitry
Small-Outline Package Option Also Available in Tape and Reel
Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments.

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOS™ operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.